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Study of Electron Transport in SOI MOSFETs Using Monte Carlo Technique with Full-Band Modeling

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Abstract

Effects of conduction-band non-parabolicity on electron transport properties in silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistors (MOSFETs) are studied by performing Monte Carlo simulation with a full-band modeling. An empirical pseudo-potential method is adopted for evaluating the two-dimensional electronic states in SOI MOSFETs. SOI-film thickness dependence of phonon-limited mobility, drift-velocity and subband occupancy is calculated and the results are compared with those of a simple effective mass approximation. The non-parabolicity effects are found to play an important role in 4-fold valleys under higher applied electric fields or at higher temperatures.

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References

  • Araya S., Yamasaki K., Ueno H., Mori N., Hamaguchi C., Perron L.M., and Lacaita A.L. 1999. Physica B 272: 565.

    Google Scholar 

  • Chelikowsky J., Chadi D.J., and Cohen M.L. 1973. Phys. Rev. B 8: 2786.

    Google Scholar 

  • Fischetti M.V. and Laux S.E. 1988. Phys. Rev. B 38: 9721.

    Google Scholar 

  • Fischetti M.V. and Laux S.E. 1993. Phys. Rev. B 48: 2244.

    Google Scholar 

  • Gámiz F., López-Villanueva J.A., Banqueri J., Carceller J.E., and Cartujo P. 1995. IEEE Trans. Electron Devices 42: 258.

    Google Scholar 

  • Gámiz F., Roldán J.B., Cartujo-Cassinello P., Carveller J.E., López-Villanueva J.A., and Rodriguez S. 1999. J. Appl. Phys. 86: 6269.

    Google Scholar 

  • Gámiz F., Roldán J.B., and López-Villanueva J.A. 1998. J. Appl. Phys. 83: 4802.

    Google Scholar 

  • Sherony M.J., Su L.T., Chung J.E., and Antoniadis D.A. 1994. IEEE Trans. Electron Devices 41: 276.

    Google Scholar 

  • Shoji M. and Horiguchi S. 1999. J. Appl. Phys. 85: 2722.

    Google Scholar 

  • Shoji M., Omura Y., and Tomizawa M. 1997. J. Appl. Phys. 81: 786.

    Google Scholar 

  • Stern F. and Howard W.E. 1967. Phys. Rev. 163: 816.

  • Takagi S., Koga J., and Toriumi A. 1998. Jpn. J. Appl. Phys. 37: 1289.

    Google Scholar 

  • Weng X.M. and Lie X.L. 1994. J. Phys. Condens. Matter 6: 6287.

    Google Scholar 

  • Yoshimi M., Hazama H., Takahashi M., Kambayashi S., Wada T., Kato K., and Tango H. 1989. IEEE Trans. Electron Devices 36: 493.

    Google Scholar 

  • Young K.K. 1989. IEEE Trans. Electron Devices 36: 504.

    Google Scholar 

Download references

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Authors and Affiliations

  1. Department of Electronic Engineering, Osaka University, 2–1 Yamada-oka, Suita City, Osaka, 565-0871, Japan

    H. Takeda, N. Mori & C. Hamaguchi

Authors
  1. H. Takeda
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  2. N. Mori
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  3. C. Hamaguchi
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Correspondence to H. Takeda.

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Takeda, H., Mori, N. & Hamaguchi, C. Study of Electron Transport in SOI MOSFETs Using Monte Carlo Technique with Full-Band Modeling. Journal of Computational Electronics 1, 467–474 (2002). https://doi.org/10.1023/A:1022988921236

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