Abstract
There are several methods used to obtain the basic diode parameters that affect the diode quality of Schottky diodes (SD) such as ideality factor (n), barrier height (ΦBo), and series resistance (Rs). In this study, it is aimed to compare the results using Ohm’s law, Thermionic Emission theory (TE), Norde and Cheung-Cheung functions. The I–V measurement of the Au/7%Gr-doped PVA/n-GaAs type SD was taken in the range of 80–360 K in 20 K steps. Considering that each method is effective in the different voltage region of the I–V curve and the parameters are strongly voltage-dependent, the results are compatible with each other. Also, the interface states (Nss) were calculated with and without Rs for each temperature value, and it was attained that the effect of Rs reduced Nss values by almost 1 degree. This result reveals the importance of the Rs parameter for SDs. As a result, it is plainly represented that the basic diode parameters n, Rs and ΦBo values are strongly dependent on temperature and voltage, and affected by barrier inhomogeneity and surface states.
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S.O. Tan, IEEE Trans. Electron Devices 64, 5121 (2017)
A. Karabulut, Bull. Mater. Sci. 42, 1 (2019)
K. Shenai, R.W. Dutton, IEEE Trans. Electron Devices 35, 468 (1988)
H. Tecimer, A. Türüt, H. Uslu, S. Altindal, I. Uslu, Sens. Actuators A Phys. 199, 194 (2013)
E. Arslan, S. Bütün, Y. Afak, H. Uslu, I. Tascioglu, S. Altindal, E. Özbay, Microelectron. Reliab. 51, 370 (2011)
T. Altindal, H. Tunç, Tecimer, I. Yücedaʇ, Mater. Sci. Semicond. Process. 28, 48 (2014)
R. Padma, N. Balaram, I.N. Reddy, V.R. Reddy, Mater. Chem. Phys. 177, 92 (2016)
H. Yu, M. Schaekers, T. Schram, S. Demuynck, N. Horiguchi, K. Barla, N. Collaert, A.V.Y. Thean, K. De Meyer, IEEE Trans. Electron Devices 63, 2671 (2016)
M.H. Al-Dharob, H.E. Lapa, A. Kökce, A.F. Özdemir, D.A. Aldemir, Altındal, Mater. Sci. Semicond. Process. 85, 98 (2018)
S.O. Tan, H. Tecimer, O. Cicek, IEEE Trans. Electron Devices 64, 984 (2017)
O. Çiçek, S.O. Tan, H. Tecimer, Ş Altındal, J. Electron. Mater. 47, 7134 (2018)
M.S.P. Reddy, H.S. Kang, J.H. Lee, V.R. Reddy, J.S. Jang, J. Appl. Polym. Sci. 131, 18 (2014)
S. Alialy, H. Tecimer, H. Uslu, Ş Altindal, J. Nanomedicine Nanotechnol. 4, 100167 (2013)
S. Demirezen, Ş Altndal, I. Uslu, Curr. Appl. Phys. 13, 53 (2013)
C.V. Subba Reddy, X. Han, Q.-Y. Zhu, L.-Q. Mai, W. Chen, Microelectron. Eng. 83, 281 (2006)
H. Uslu, Ş Altındal, T. Tunç, İ Uslu, T.S. Mammadov, J. Appl. Polym. Sci. 120, 322 (2011)
K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, Y. Zhang, S.V. Dubonos, I.V. Grigorieva, A.A. Firsov, Science 306, 666 (2004)
A.K. Geim, K.S. Novoselov, Nat. Mater. 6, 183 (2007)
S. Park, R.S. Ruoff, Nat. Nanotechnol. 4, 217 (2009)
B.P. Singh, B.K. Jena, S. Bhattacharjee, L. Besra, Surf. Coatings Technol. 232, 475 (2013)
T.K. Das, S. Prusty, Polym. Plast. Technol. Eng. 52, 319 (2013)
J.J. Hernández Rosas, R.E. Ramírez Gutiérrez, A. Escobedo-Morales, E. Chigo Anota, J. Mol. Model. 17, 1133 (2011)
Z. Khurelbaatar, M.S. Kang, K.H. Shim, H.J. Yun, J. Lee, H. Hong, S.Y. Chang, S.N. Lee, C.J. Choi, J. Alloys Compd. 650, 658 (2015)
G. Liu, M. Zhang, Z. Xue, X. Hu, T. Wang, X. Han, Z. Di, J. Alloys Compd. 794, 218 (2019)
F.A. Chaves, D. Jimenez, IEEE Trans. Electron Devices 63, 4521 (2016)
O. Çiçek, H. Uslu Tecimer, S.O. Tan, H. Tecimer, Orak, and Altındal, Compos. Part B Eng. 113, 14 (2017)
R.T. Tung, Appl. Phys. Lett. 58, 2821 (1991)
J.P. Sullivan, R.T. Tung, M.R. Pinto, W.R. Graham, J. Appl. Phys. 70, 7403 (1991)
J.H. Werner, H.H. Güttler, J. Appl. Phys. 69, 1522 (1991)
R.T. Tung, Phys. Rev. B 45, 13509 (1992)
S. Boughdachi, Y. Badali, Y. Azizian-Kalandaragh, S. Altındal, J. Electron. Mater. 47, 6945 (2018)
N. Tuğluoğlu, H. Koralay, Akgül, and Çavdar. Indian J. Phys. 90, 43 (2016)
W. Mönch, J. Vac. Sci. Technol. B Microelectron. Nanom. Struct. 17, 1867 (1999)
R.F. Schmitsdorf, T.U. Kampen, W. Mönch, Surf. Sci. 324, 249 (1995)
J. Osvald, Z.J. Horváth, Appl. Surf. Sci. 234, 349 (2004)
H. Norde, J. Appl. Phys. 50, 5052 (1979)
K. Sato, Y. Yasumura, J. Appl. Phys. 58, 3655 (1985)
A.B. McLean, Semicond. Sci. Technol. 1, 177 (1986)
K.E. Bohlin, J. Appl. Phys. 60, 1223 (1986)
S.K. Cheung, N.W. Cheung, Appl. Phys. Lett. 49, 85 (1986)
E.H. Rhoderick, R.H. Williams, Metal-semiconductor contacts, 2nd edn. (Clarendon, Oxford, 1988)
B.L. Sharma, Metal-semiconductor Schottky Barrier junctions and their applications (Springer, Berlin, 2013)
O. Çiçek, H.U. Tecimer, S.O. Tan, H. Tecimer, S. Altindal, I. Uslu, Compos. Part B Eng. 98, 260 (2016)
I. Tascioglu, U. Aydemir, Ş Altndal, B. Kínací, S. Özçelik, J. Appl. Phys. 109, 054502 (2011)
S. Altındal Yerişkin, J. Mater. Sci. Mater. Electron. 30, 17032 (2019)
A. Kaya, E. Marıl, S. AltIndal, I. Uslu, Microelectron. Eng. 149, 166 (2016)
V. Janardhanam, I. Jyothi, K.S. Ahn, C.J. Choi, Thin Solid Films 546, 63 (2013)
Ş Aydoǧan, M. Saǧlam, A. Türüt, Y. Onganer, Mater. Sci. Eng. C 29, 1486 (2009)
S. Sm, K.K. Ng, Physics of semiconductor device (Wiley, Hoboken, 2007)
C.-D. Lien, F.C.T. So, M.-A. Nicolet, IEEE Trans. Electron Devices 31, 1502 (1984)
H. Uslu, Ş Altindal, U. Aydemir, I. Dökme, I.M. Afandiyeva, J. Alloys Compd. 503, 96 (2010)
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Evcin Baydilli, E., Altındal, Ş., Tecimer, H. et al. The determination of the temperature and voltage dependence of the main device parameters of Au/7%Gr-doped PVA/n-GaAs-type Schottky Diode (SD). J Mater Sci: Mater Electron 31, 17147–17157 (2020). https://doi.org/10.1007/s10854-020-03799-5
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DOI: https://doi.org/10.1007/s10854-020-03799-5