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Thermal sensors based on delafossite film/p-silicon diode for low-temperature measurements

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Abstract

A CuFeO2 film was prepared on p-type silicon wafer to fabricate an Al/CuFeO2/p-Si/Al diode by the sol–gel method. The temperature and frequency dependence of electrical characteristics of Al/CuFeO2/p-Si/Al diode were investigated using current–voltage (I–V) and capacitance/conductance–voltage (C/G–V) measurements. It is found that the ideality factor (n) decreases while zero-bias barrier height (Φ Bo) increases with increasing temperature. The conventional Richardson plot [ln(I o/T 2) vs. 1000/T] shows a linearity above about 200 °K. From the slope and intercept of the linear region, the values of activation energy (E a) and Richardson constant (A*) were found to be 0.15 eV and 1.24 × 10−8 A cm−2 K−2, respectively. Then, the values of mean barrier height and A* were determined from the modified Richardson plot [ln(I 0/T 2)−q 2 σ 20 /2k 2 T 2 vs. 1000/T] and found to be 1.06 eV and 33.87 A cm−2 K−2, respectively. The calculated A* value is very close to the theoretical value of 32 A cm−2 K−2 for p-type Si. The obtained results indicate that Al/CuFeO2/p-Si/Al diode can be used as a temperature measurement sensor for low-temperature controlling applications.

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Acknowledgments

This study was supported by Unit of Scientific Research Projects of Firat University under project numbers: FF.14.33 and FF.12.10 and was also supported by King Saud University.

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Authors and Affiliations

  1. Department of Physics, Faculty of Science, Suez Canal University, Ismailia, Egypt

    Elsayed Elgazzar & Farid El-Tantawy

  2. Department of Physics, Faculty of Science, Gazi University, Ankara, Turkey

    A. Tataroğlu

  3. Department of Physics, Faculty of Sciences, King Abdulaziz University, Jeddah, Saudi Arabia

    Ahmed A. Al-Ghamdi & F. Yakuphanoglu

  4. Department of Electrical and Computer Engineering, King Abdulaziz University, Jeddah, Saudi Arabia

    Yusuf Al-Turki

  5. Department of Physics and Astronomy, College of Science, King Saud University, Riyadh, Saudi Arabia

    W. A. Farooq

  6. Center of Nanotechnology, King Abdulaziz University, Jeddah, Saudi Arabia

    Farid El-Tantawy

  7. Department of Physics, Faculty of Science, Firat University, Elazig, Turkey

    F. Yakuphanoglu

Authors
  1. Elsayed Elgazzar
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  2. A. Tataroğlu
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  3. Ahmed A. Al-Ghamdi
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  4. Yusuf Al-Turki
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  5. W. A. Farooq
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  6. Farid El-Tantawy
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  7. F. Yakuphanoglu
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Correspondence to F. Yakuphanoglu.

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Elgazzar, E., Tataroğlu, A., Al-Ghamdi, A.A. et al. Thermal sensors based on delafossite film/p-silicon diode for low-temperature measurements. Appl. Phys. A 122, 617 (2016). https://doi.org/10.1007/s00339-016-0148-y

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