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PdSe2/MoSe2 vertical heterojunction for self-powered photodetector with high performance

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Abstract

Van der Waals’ two-dimensional (2D) material heterostructure engineering offers an effective strategy for the design of multifunctional and high-performance optoelectronic devices. However, 2D heterostructure photodetectors with a photoconductive effect tend to suffer from high driving source-drain voltages and significant dark noise currents. Herein, a self-powered photodetector with high performance was fabricated based on vertically stacked graphene/MoSe2/PdSe2/graphene heterojunctions through a dry transfer method. The fabricated device displays current rectification characteristics in darkness (on/off ratio > 103) and superior photovoltaic behaviors under illumination. In addition, benefitting from the strong built-in field, the Gr/PdSe2/MoSe2/Gr heterojunction photodetector is able to respond to a broad spectrum from visible to near-infrared (NIR) with a remarkable responsivity of 651 mA·W−1, a high specific detectivity of 5.29 × 1011 Jones and a fast response speed of 41.7/62.5 µs. Moreover, an enhanced responsivity of 1.16 A·W−1 has been obtained by a reverse voltage (−1 V) and further evaluation on image recognition has also demonstrated the great application potential of the Gr/MoSe2/PdSe2/Gr heterojunction photodetector. The findings are expected to bring new opportunities for the development of highly sensitive, high-speed and energy-efficient photodetectors for comprehensive applications.

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Acknowledgment

We gratefully acknowledge the support from the National Natural Science Foundation of China (No. 61775241), the Hunan Science Fund for Distinguished Young Scholar (No. 2020JJ2059), Hunan Province Key Research and Development Project (No. 2019GK2233), Youth Innovation Team (No. 2019012) of CSU, Hunan Province Graduate Research and Innovation Project (No. CX20190177), and the Science and Technology Innovation Basic Research Project of Shenzhen (No. JCYJ20180307151237242). Also, Y. P. L. acknowledges the supported by the Project of State Key Laboratory of High-Performance Complex Manufacturing, Central South University (No. ZZYJKT2020-12). Z. W. L. thanks the funding support from the Australian Research Council (ARC Discovery Projects, Nos. DP210103539, DP180102976, and DP130104231).

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Authors and Affiliations

  1. School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, Changsha, 410083, China

    Jiahong Zhong, Biao Wu, Yassine Madoune, Yunpeng Wang & Yanping Liu

  2. State Key Laboratory of High-Performance Complex Manufacturing, Central South University, Changsha, 410083, China

    Jiahong Zhong, Biao Wu, Yassine Madoune & Yanping Liu

  3. School of Chemical and Biomolecular Engineering, The University of Sydney, Camperdown, NSW, 2006, Australia

    Zongwen Liu

  4. The University of Sydney Nano Institute, The University of Sydney, Camperdown, NSW, 2006, Australia

    Zongwen Liu

  5. Shenzhen Research Institute of Central South University, A510a, Virtual University Building, Southern District, High-tech Industrial Park, Yuehai Street, Nanshan District, Shenzhen, 518057, China

    Yanping Liu

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  1. Jiahong Zhong
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  2. Biao Wu
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  3. Yassine Madoune
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  4. Yunpeng Wang
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Correspondence to Yanping Liu.

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Zhong, J., Wu, B., Madoune, Y. et al. PdSe2/MoSe2 vertical heterojunction for self-powered photodetector with high performance. Nano Res. 15, 2489–2496 (2022). https://doi.org/10.1007/s12274-021-3745-9

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