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Influence of Palladium Thickness on the Soldering Reactions Between Sn-3Ag-0.5Cu and Au/Pd(P)/Ni(P) Surface Finish

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This study provides a comparison of the influence of Pd(P) thickness on reactions during soldering with the Sn-3Ag-0.5Cu alloy. Soldering was carried out in an infrared-enhanced conventional reflow oven, and a multiple reflow test method (up to ten cycles) was performed. With increasing Pd(P) thickness, the (Cu,Ni)6Sn5 grew more slowly at the solder/Ni(P) interface, while the Ni2SnP/Ni3P bilayer became predominant after the first reflow. These three intermetallics, i.e., (Cu,Ni)6Sn5, Ni2SnP, and Ni3P, gradually coarsened as the number of reflow cycles increased. Furthermore, an additional (Ni,Cu)3Sn4 layer appeared between (Cu,Ni)6Sn5 and Ni2SnP, especially for the case of a thicker Pd(P) layer (0.2 μm). The attachment of the (Ni,Cu)3Sn4 to the Ni2SnP, however, was fairly poor, and a series of microcracks formed along the (Ni,Cu)3Sn4/Ni2SnP interface. To quantify the mechanical response of the interfacial microstructures, shear testing was conducted at two different shear speeds (0.0007 m/s and 2 m/s). The results indicated that the interfacial strength and the Pd(P) thickness were strongly correlated.

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References

  1. J. Glazer, Int. Mater. Rev. 40, 65 (1995).

    CAS  Google Scholar 

  2. K.N. Tu and K. Zeng, Mater. Sci. Eng. R34, 1 (2001).

    CAS  Google Scholar 

  3. T. Laurila, V. Vuorinen, and J.K. Kivilahti, Mater. Sci. Eng. R49, 1 (2005).

    CAS  Google Scholar 

  4. A.J.G. Strandjord, S. Popelar, and C. Jauernig, Microelectron. Reliab. 42, 265 (2002).

    Article  Google Scholar 

  5. J.W. Jang, P.G. Kim, K.N. Tu, D.R. Frear, and P. Thompson, J. Appl. Phys. 85, 8456 (1999).

    Article  CAS  ADS  Google Scholar 

  6. P. Snugovsky, P. Arrowsmith, and M. Romansky, J. Electron. Mater. 30, 1262 (2001).

    Article  CAS  ADS  Google Scholar 

  7. R.J. Coyle, D.E.H. Popps, A. Mawer, D.P. Cullen, G.M. Wenger, and P.P. Solan, IEEE Trans. Comp. Packag. Technol. 26, 724 (2003).

    Article  CAS  Google Scholar 

  8. K. Zeng, R. Stierman, D. Abbott, and M. Murtuza, JOM 58, 75 (2006).

    Article  CAS  Google Scholar 

  9. K. Suganuma and K.S. Kim, JOM 60, 61 (2008).

    Article  CAS  Google Scholar 

  10. B.K. Kim, S.J. Lee, J.Y. Kim, K.Y. Ji, Y.J. Yoon, M.Y. Kim, S.H. Park, and J.S. Yoo, J. Electron. Mater. 37, 527 (2008).

    Article  CAS  ADS  Google Scholar 

  11. P. Ratchev, S. Stoukatch, and B. Swinnen, Microelectron. Reliab. 46, 1315 (2006).

    Article  CAS  Google Scholar 

  12. W. Sun, W.H. Zhu, E.S.W. Poh, H.B. Tan, and R.T. Gan, Proceeding of International Conference on Electronic Packaging Technology & High Density Packaging, ICEPT-HDP (2008), p. 1.

  13. Y. Oda, M. Kiso, S. Kurosaka, A. Okada, K. Kitajima, and S. Hashimoto, Proceeding of International Microelectronics & Packaging Society, IMAPS (2008).

  14. P.G. Kim, K.N. Tu, and D.C. Abbott, J. Appl. Phys. 84, 770 (1998).

    Article  CAS  ADS  Google Scholar 

  15. G. Ghosh, J. Electron. Mater. 28, 1238 (1999).

    Article  CAS  ADS  Google Scholar 

  16. S.P. Peng, W.H. Wu, C.E. Ho, and Y.M. Huang, J. Alloys Compd. 493, 431 (2010).

    Article  CAS  Google Scholar 

  17. W.H. Wu, H.L. Chung, C.N. Chen, and C.E. Ho, J. Electron. Mater. 38, 2563 (2009).

    Article  CAS  ADS  Google Scholar 

  18. BGA Ball Shear, JESD22-B117, JEDEC Solid State Technology Association (2006).

  19. C.E. Ho, R.Y. Tsai, Y.L. Lin, and C.R. Kao, J. Electron. Mater. 31, 584 (2002).

    Article  CAS  ADS  Google Scholar 

  20. K. Zeng and K.N. Tu, Mater. Sci. Eng. R38, 55 (2002).

    CAS  Google Scholar 

  21. C.E. Ho, S.C. Yang, and C.R. Kao, J. Mater. Sci.: Mater. Electron. 18, 155 (2007).

    Article  CAS  Google Scholar 

  22. Y.C. Lin and J.G. Duh, Scripta Mater. 54, 1161 (2006).

    Google Scholar 

  23. Y.C. Lin, T.Y. Shih, S.K. Tien, and J.G. Duh, Scripta Mater. 56, 49 (2007).

    Article  CAS  Google Scholar 

  24. Y.C. Lin, K.J. Wang, and J.G. Duh, J. Electron. Mater. 39, 283 (2010).

    Article  CAS  ADS  Google Scholar 

  25. Z.P. Xia, Y. Lin, and Z.Q. Li, Mater. Charact. 59, 1324 (2008).

    Article  CAS  Google Scholar 

  26. J.W. Yoon and S.B. Jung, J. Alloys Compd. 396, 122 (2005).

    Article  CAS  Google Scholar 

  27. S. Furuseth and H. Fjellvåg, ACTA Chem. Scand. Ser. A 39, 537 (1985).

    Article  Google Scholar 

  28. H. Matsuki, H. Ibuka, and H. Saka, Sci. Technol. Adv. Mater. 3, 261 (2002).

    Article  CAS  Google Scholar 

  29. S.W. Kim, J.W. Yoon, and S.B. Jung, J. Electron. Mater. 33, 1182 (2004).

    Article  CAS  ADS  Google Scholar 

  30. Y.C. Sohn, J. Yu, S.K. Kang, D.Y. Shih, and T.Y. Lee, J. Mater. Res. 19, 2428 (2004).

    Article  CAS  ADS  Google Scholar 

  31. S.J. Wang and C.Y. Liu, Scripta Mater. 49, 813 (2003).

    Article  CAS  Google Scholar 

  32. C.E. Ho, Y.M. Chen, and C.R. Kao, J. Electron. Mater. 28, 1231 (1999).

    Article  CAS  ADS  Google Scholar 

  33. G. Ghosh, Acta Mater. 48, 3719 (2000).

    Article  CAS  Google Scholar 

  34. K.N. Tu, Solder Joint Technology—Materials, Properties, and Reliability (New York: Springer, 2007).

    Google Scholar 

  35. Y. Wang and K.N. Tu, Appl. Phys. Lett. 67, 1069 (1995).

    Article  CAS  ADS  Google Scholar 

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Wu, W.H., Lin, C.S., Huang, S.H. et al. Influence of Palladium Thickness on the Soldering Reactions Between Sn-3Ag-0.5Cu and Au/Pd(P)/Ni(P) Surface Finish. J. Electron. Mater. 39, 2387–2396 (2010). https://doi.org/10.1007/s11664-010-1351-9

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  • DOI: https://doi.org/10.1007/s11664-010-1351-9

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