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Enhancement of optical, electrical and sensing characteristics of ZnO nanowires for optoelectronic applications

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Abstract

In this work, the synthesis of undoped and Sn-doped ZnO nanowires using vapor transport technique is reported. The effects of Sn content on morphological, structural, optical, electrical and sensing characteristics of ZnO nanowire films were examined by utilizing various techniques. X-ray diffraction inferred that all undoped and Sn-doped ZnO films are indexed to single hexagonal phase and no additional phases for tin or tin oxides were presented. The estimated Sn at.% rations was proportionate with the Sn ratios utilized in the source ingots. The morphology of the undoped ZnO sample was nanowires with quite long and smooth surfaces. After Sn doping, the smoothness of the nanowires is reduced and agglomerations of particles are observed. A reduction in transmittance and an increase in reflectance were observed after Sn doping. The optical band gap reduced from 3.27 to 3.06 eV with the elevation of Sn doping percent from 0 to 7 at.%. Two characteristic emission peaks were seen in the spectra around 388 nm and 540 nm. The emission peaks were affected by the Sn doping ratio. All the nanowires films demonstrated the semiconductor type manner with two distinct activation energies. The Sn doping enhanced the sensitivity of the sensors toward NO2 gas.

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Acknowledgements

The authors extend their appreciation to the Deanship of Scientific Research at Jouf University for funding this work through research grant no. (DSR2022-GR-0122).

Funding

This study was funded by the Deanship of Scientific Research at Jouf University, DSR2022-GR-0122,N.M.A. Hadia

Author information

Authors and Affiliations

  1. Physics Department, College of Science, Jouf University, P.O. Box 2014, Sakaka, Saudi Arabia

    N. M. A. Hadia, Meshal Alzaid, Bandar Alqahtani, Mohammed Al-Shaghdali, W. S. Mohamed & Mohammed Ezzeldien

  2. Nanophotonics and Applications Lab, Physics Department, Faculty of Science, Beni-Suef University, Beni-Suef, 62514, Egypt

    Mohamed Shaban, Ashour M. Ahmed & Mohamed Rabia

  3. Department of Physics, Faculty of Science, Islamic University of Madinah, Prince Naifbin Abdulaziz, Al Jamiah, Madinah, 42351, Saudi Arabia

    Mohamed Shaban

  4. Physics Department, College of Science, Imam Mohammad Ibn Saud Islamic University (IMSIU), Riyadh, 11623, Saudi Arabia

    Ashour M. Ahmed

  5. Nanomaterials Science Research Laboratory, Chemistry Department, Faculty of Science, Beni-Suef University, Beni-Suef, 62514, Egypt

    Mohamed Rabia

  6. Physics Department, Faculty of Science, Sohag University, Sohag, 82524, Egypt

    S. H. Mohamed & M. A. Awad

Authors
  1. N. M. A. Hadia
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Contributions

NMAH was involved in supervision, writing—original draft and writing—review and editing. MA contributed to conceptualization, methodology and investigation. BA assisted in the conceptualization, methodology and investigation. MA-S contributed to the conceptualization, methodology and investigation. WSM contributed to the methodology, investigation, formal analysis and editing. ME contributed to the methodology, investigation and formal analysis. MS performed the conceptualization, methodology, investigation and formal analysis. AMA contributed to the methodology and writing—review and editing. MR was involved in the methodology, writing—review and editing. SHM performed writing—review and editing. MAA contributed to the methodology, investigation and formal analysis.

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Correspondence to N. M. A. Hadia.

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Hadia, N.M.A., Alzaid, M., Alqahtani, B. et al. Enhancement of optical, electrical and sensing characteristics of ZnO nanowires for optoelectronic applications. J Mater Sci: Mater Electron 34, 456 (2023). https://doi.org/10.1007/s10854-023-09905-7

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