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Tuning of optical bandgap, conductivity parameters, and PL emissions of SnO2:Ni thin films under Ar, N2, and O2 annealing

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Abstract

The influence of annealing atmosphere (N2, Ar, and O2) on optical properties and electrical parameters of SnO2:Ni thin films prepared by sol–gel process was investigated. The XRD results showed that the samples possessed tetragonal rutile-type phase, as well as Ni-doped SnO2 thin film under N2 annealing ambience revealed no distinct peaks. The FESEM images revealed that the film surface is constituted by homogenous spherical nanograins. The transmittance spectra of the films showed that O2 annealing enhanced the transparency of the films. The optical measurements yielded that annealing under oxygen led to the lowest extinction coefficient while annealing in Ar caused to the highest refractive index of SnO2:Ni thin films. The film annealed in O2 has the highest band-gap value, whereas Ar annealing reduced the band-gap value. The PL spectra disclosed an intense blue emission in N2 ambience. The Hall effect measurements indicated that the best electrical response (conductivity, carrier concentration, and mobility) in prepared samples is reached after annealing in Ar ambience. In addition, annealing in the O2 atmosphere converted the conductivity type of Ni-doped SnO2 thin films from n-type to p-type.

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Acknowledgements

The partial support of this work by the Research Council of the University of Guilan is gratefully acknowledged.

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Authors and Affiliations

  1. Department of Physics, Faculty of Science, University of Guilan, Namjoo Avenue, P.O. Box 413351914, Rasht, Iran

    A. Salehi, F. E. Ghodsi, J. Mazloom & S. Ebrahimi-Koodehi

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  1. A. Salehi
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  2. F. E. Ghodsi
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  3. J. Mazloom
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  4. S. Ebrahimi-Koodehi
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Correspondence to F. E. Ghodsi.

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Salehi, A., Ghodsi, F.E., Mazloom, J. et al. Tuning of optical bandgap, conductivity parameters, and PL emissions of SnO2:Ni thin films under Ar, N2, and O2 annealing. Appl. Phys. A 124, 661 (2018). https://doi.org/10.1007/s00339-018-2087-2

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  • DOI: https://doi.org/10.1007/s00339-018-2087-2

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