Abstract
Titanium dioxide (anatase, a-TiO2) films have been prepared by electron beam sputtering of a TiO2 target in reactive atmosphere and their structural, microstructural, and optical properties were evaluated by reflection high- energy electron diffraction (RHEED) and x-ray diffraction (XRD) analyses, atomic force microscopy (AFM), and spectroscopic ellipsometry (SE). Different reflection models for determination of film optical parameters were tested and compared. The dispersive optical parameters were defined using the Tauc–Lorentz model by SE in the photon energy range of E = 1.12–4.96 eV. The films were transparent at E < 3 eV, but noticeable absorption was detected at E > 3 eV. The bandgap was estimated at the level of E g ≈ 3.44 eV.
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References
R.W.G. Wyckoff, Crystal Structures, 4th ed. (New York: Wiley, 1974).
V.E. Henrich, Rep. Prog. Phys. 48, 1481 (1985).
B. Poumellect, P.J. Durham, and G.Y. Guo, J. Phys. Condens. Matter 3, 8195 (1991).
M.A. Khan, A. Kotani, and J.C. Parlebas, J. Phys. Condens. Matter 3, 1763 (1991).
K.M. Glassford and J.R. Chelikowsky, Phys. Rev. B 45, 3874 (1992).
K.M. Glassford and J.R. Chelikowsky, Phys. Rev. B 46, 1284 (1992).
A.F. Fahmi, C. Minot, B. Silvi, and M. Causa, Phys. Rev. B 47, 11717 (1993).
L.B. Lin, S.D. Mo, and D.L. Lin, J. Phys. Chem. Solids 54, 907 (1993).
S.D. Mo and W.Y. Ching, Phys. Rev. B 51, 13023 (1995).
A. Amtout and R. Leonelli, Phys. Rev. B 51, 6842 (1995).
P. Reinhardt, B.A. Hess, and M. Causa, Int. J. Quant. Chem. 58, 297 (1996).
P.K. Schelling, N. Yu, and J.W. Halley, Phys. Rev. B 58, 1279 (1998).
C. Ting, S. Chen, and D. Liu, J. Appl. Phys. 88, 4628 (2000).
M. Mosaddeq-ur-Rahman, G. Yu, T. Soga, T. Jimbo, H. Ebisu, and M. Umeno, J. Appl. Phys. 88, 4634 (2000).
D.V. Gritsenko, S.S. Shaimeev, V.V. Atuchin, T.I. Grigor’eva, L.D. Pokrovsky, O.P. Pchelyakov, V.A. Gritsenko, A.L. Aseev, and V.G. Lifshits, Phys. Solid State 48, 224 (2006).
B.M. Ayupov, V.V. Atuchin, T.I. Grigor’eva, L.D. Pokrovsky, and M.S. Lebedev, Russ. Phys. J. 49, 468 (2006).
V.V. Atuchin, V.G. Kesler, N.V. Pervukhina, and Z. Zhang, J. Electron. Spectros. Relat. Phenomena 152, 18 (2006).
H.M. Lawler, J.J. Rehr, F. Vila, S.D. Dalosto, E.L. Shirley, and Z.H. Levine, Phys. Rev. B 78, 205108 (2008).
T.V. Perevalov and V.A. Gritsenko, Phys. Usp. 53, 561 (2010).
V.A. Gritsenko and T.V. Perevalov, Electronic Structure of High-k Dielectrics and Application in Silicon Microelectronics, ed. A.L. Aseev (Novosibirsk: SB RAS, 2010), (in Russian).
I.B. Troitskaia, T.A. Gavrilova, and V.V. Atuchin, Phys. Proc. 23, 65 (2012).
S.J. Tauster, S.C. Fung, and R.L. Garten, J. Am. Chem. Soc. 100, 170 (1978).
S. Sato and J.M. White, J. Phys. Chem. 85, 592 (1981).
D.J. Dwyer, S.D. Cameron, and J. Gland, Surf. Sci. 159, 430 (1985).
V.M. Kalygina, I.S. Egorova, I.A. Prudaev, O.P. Tolbanov, and V.V. Atuchin, Chin. J. Phys. 55, 59 (2017).
J. Yan, D.C. Gilmer, S.A. Campbell, W.L. Gladfelter, and P.G. Schmid, J. Vac. Sci. Technol. B 14, 1706 (1996).
S.A. Campbell, D.C. Gilmer, X.-C. Wang, M. Hsieh, H.-S. Kim, W.L. Gladfelter, and J. Yan, IEEE Trans. Electron Devices 44, 104 (1997).
S.-K. Kim, W.-D. Kim, K.-M. Kim, and C.S. Hwanga, IEEE Electron Device Lett. 18, 465 (1997).
H.-S. Kim, S.A. Campbell, D.C. Gilmer, V. Kaushik, J. Conner, L. Prabhu, and A. Andersons, J. Appl. Phys. 85, 3278 (1999).
C.K. Maiti, S.K. Samanta, G.K. Dalapati, S.K. Nandi, and S. Chatterjee, Microelectron. Eng. 72, 253 (2004).
V.M. Kalygina, I.S. Egorova, I.A. Prudaev, O.P. Tolbanov, and V.V. Atuchin, Microw. Opt. Technol. Lett. 58, 1113 (2016).
A.I. Kingon, J.-P. Maria, and S.K. Streiffer, Nature 406, 1032 (2000).
J. Robertson, Eur. Phys. J. Appl. Phys. 28, 265 (2004).
S.K. Kim, W.-D. Kim, K.-M. Kim, C.S. Hwang, and J. Jeong, Appl. Phys. Lett. 85, 4112 (2004).
V.K. Yarmarkin, S.G. Shul′man, and V.V. Lemanov, Phys. Solid State 50, 1841 (2008).
D.R. Islamov, V.A. Gritsenko, C.H. Cheng, and A. Chin, Appl. Phys. Lett. 101, 032101 (2012).
W. Kern, J. Electrochem. Soc. 137, 1887 (1990).
M. Itano, F.W. Kern, M. Miyashita, and T. Ohmi, IEEE Trans. Semicond. Manuf. 6, 258 (1993).
C.V. Ramana, V.V. Atuchin, V.G. Kesler, V.A. Kochubey, L.D. Pokrovsky, V. Shutthanandan, U. Becker, and R.C. Ewing, Appl. Surf. Sci. 253, 5368 (2007).
V.V. Atuchin, L.D. Pokrovsky, O.Y. Khyzhun, A.K. Sinelnichenko, and C.V. Ramana, J. Appl. Phys. 104, 044518 (2008).
S.V. Rykhlitski, E.V. Spesivtsev, V.A. Shvets, and V.Y. Prokopiev, Instrum. Exp. Tech. 2, 160 (2007).
G.E. Jellison Jr., Thin Solid Films 313–314, 33 (1998).
H. Fujiwara, Spectroscopic Ellipsometry: Principles and Applications (New York: Wiley, 2007).
M. Vargas, E.J. Rubio, A. Gutierrez, and C.V. Ramana, J. Appl. Phys. 115, 133511 (2014).
G.E. Jellison Jr. and F.A. Modine, Appl. Phys. Lett. 69, 371 (1996).
G. He, Q. Fang, J.X. Zhang, L.Q. Zhu, M. Liu, and L.D. Zhang, Nanotechnology 16, 1641 (2005).
S. Kondo, T. Sumi, and T. Seki, Phys. Stat. Sol. B 184, K57 (1994).
R. Zallen, The Physics of Amorphous Solids (New York: Wiley, 1983).
P. Giannozzi, S. Baroni, N. Bonini, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, G.L. Chiarotti, M. Cococcioni, I. Dabo, A. Dal Corso, S. de Gironcoli, S. Fabris, G. Fratesi, R. Gebauer, U. Gerstmann, C. Gougoussis, A. Kokalj, M. Lazzeri, L. Martin-Samos, N. Marzari, F. Mauri, R. Mazzarello, S. Paolini, A. Pasquarello, L. Paulatto, C. Sbraccia, S. Scandolo, G. Sclauzero, A.P. Seitsonen, A. Smogunov, P. Umari, and R.M. Wentzcovitch, J. Phys. Condens. Matter 21, 395502 (2009).
T.V. Perevalov and V.A. Gritsenko, J. Exp. Theor. Phys. 112, 310 (2011).
C.V. Ramana, V.V. Atuchin, U. Becker, R.C. Ewing, L.I. Isaenko, O.Y. Khyzhun, A.A. Merkulov, L.D. Pokrovsky, A.K. Sinelnichenko, and S.A. Zhurkov, J. Phys. Chem. C 111, 2702 (2007).
V.V. Atuchin, L.I. Isaenko, O.Y. Khyzhun, L.D. Pokrovsky, A.K. Sinelnichenko, and S.A. Zhurkov, Opt. Mater. 30, 1149 (2008).
V.L. Bekenev, O.Y. Khyzhun, and V.V. Atuchin, J. Alloys Compd. 485, 51 (2009).
J.K. Burdett, T. Hughbanks, G.J. Miller, J.W. Richardson, and J.V. Smith, J. Am. Chem. Soc. 109, 3639 (1987).
V.H. Mudavakkat, V.V. Atuchin, V.N. Kruchinin, A. Kayani, and C.V. Ramana, Opt. Mater. 34, 893 (2012).
C.V. Ramana, S. Utsunomiya, R.C. Ewing, U. Becker, V.V. Atuchin, V.S. Aliev, and V.N. Kruchinin, Appl. Phys. Lett. 92, 011917 (2008).
V.V. Atuchin, V.A. Kochubey, L.D. Pokrovsky, V.N. Kruchinin, and C.V. Ramana, Opt. Spectr. 117, 423 (2014).
N. An, K. Wang, H. Wei, Q. Song, and S. Xiao, MRS Commun. Res. Lett. 1, 77 (2016).
Z. Essalhi, B. Hartiti, A. Lfakir, M. Siadat, and P. Thevenin, J. Mater. Environ. Sci. 7, 1328 (2016).
G.E. Jellison, L.A. Boatner, J.D. Budai, B.-S. Jeong, and D.P. Norton, J. Appl. Phys. 93, 9537 (2003).
B. Salvador, J. Ferre-Borrull, N. Leinfellner, and A. Canillas, Surf. Sci. 453, 9 (2000).
S. Tanemura, L. Miao, P. Jin, K. Kaneko, A. Terai, and N. Nabatova-Gabain, Appl. Phys. Sci. 212–213, 654 (2003).
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Kruchinin, V.N., Perevalov, T.V., Atuchin, V.V. et al. Optical Properties of TiO2 Films Deposited by Reactive Electron Beam Sputtering. J. Electron. Mater. 46, 6089–6095 (2017). https://doi.org/10.1007/s11664-017-5552-3
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DOI: https://doi.org/10.1007/s11664-017-5552-3