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X-ray irradiation-induced degradation in Hf0.5Zr0.5O2 fully depleted silicon-on-insulator n-type metal oxide semiconductor field-effect transistors

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Abstract

The n-type ultrathin fully depleted silicon-on-insulator (FDSOI) metal–oxide–semiconductor field-effect transistors (MOSFETs), with a Hf0.5Zr0.5O2 high dielectric permittivity (high-k) dielectric as gate insulator, were fabricated. The total ionizing dose effects were investigated, and an X-ray radiation dose up to 1500 krad(Si) was applied for both long- and short-channel devices. The short-channel devices (0.025–0.100 μm) exhibited less irradiation sensitivity compared with the long-channel devices (0.35–16 μm), leading to a 71% reduction in the irradiation-induced drain current growth and a 26% decrease in the shift of the threshold voltage. It was experimentally demonstrated that the OFF mode is the worst case among the three working conditions (OFF, ON and All0) for short-channel devices. Also, the determined effective electron mobility was enhanced by 38% after X-ray irradiation, attributed to the different compensations for charges triggered by radiation between the high-k dielectric and buried oxide. By extracting the carrier mobility, gate length modulation, and source/drain (S/D) parasitic resistance, the degradation mechanism on X-ray irradiation was revealed. Finally, the split capacitance–voltage measurements were used to validate the analysis.

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Acknowledgements

This work was financially supported by the National Natural Science Foundation of China (Nos. 61874135, 61904194 and 11905287), the National Major Project of Science and Technology of China (No. 2017ZX02315001), the Youth Innovation Promotion Association, CAS (No. Y9YQ01R004) and the Opening Project of Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, CAS (No. Y9YS05X002).

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Authors and Affiliations

  1. Key Laboratory of Microelectronics Devices and Integrated Technology, Integrated Circuit Advanced Process Center (ICAC), Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China

    Yu-Dong Li, Qing-Zhu Zhang & Zhao-Hao Zhang

  2. University of Chinese Academy of Sciences, Beijing, 100049, China

    Yu-Dong Li & Feng-Yuan Zhang

  3. Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China

    Fan-Yu Liu, Feng-Yuan Zhang & Bo Li

  4. State Key Laboratory of Advanced Materials for Smart Sensing, GRINM Group Co. Ltd, Beijing, 100088, China

    Qing-Zhu Zhang & Hong-Bin Zhao

  5. School of Information Science and Technology, North China University of Technology, Beijing, 100144, China

    Jiang Yan

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  1. Yu-Dong Li
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Correspondence to Fan-Yu Liu or Bo Li.

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Li, YD., Zhang, QZ., Liu, FY. et al. X-ray irradiation-induced degradation in Hf0.5Zr0.5O2 fully depleted silicon-on-insulator n-type metal oxide semiconductor field-effect transistors. Rare Met. 40, 3299–3307 (2021). https://doi.org/10.1007/s12598-020-01586-z

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  • DOI: https://doi.org/10.1007/s12598-020-01586-z

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