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Effects of total dose irradiation on the threshold voltage of H-gate SOI NMOS devices

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Abstract

This work researched the impact of total dose irradiation on the threshold voltage of N-type metal oxide semiconductor field effect transistors (nMOSFETs) in silicon-on-insulator (SOI) technology. Using the subthreshold separation technology, the factor causing the threshold voltage shift was divided into two parts: trapped oxide charges and interface states, the effects of which are presented under irradiation. Furthermore, by analyzing the data, the threshold voltage shows a negative shift at first and then turns to positive shift when irradiation dose is lower. Additionally, the influence of the dose rate effects on threshold voltage is discussed. The research results show that the threshold voltage shift is more significant in low dose rate conditions, even for a low dose of 100 krad(Si). The degeneration value of threshold voltage is 23.4 % and 58.0 % for the front-gate and the back-gate at the low dose rate, respectively.

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Acknowledgments

The authors are grateful to Dr. Yao Zhi-Bin and Dr. He Bao-Ping at the Northwest Institute of Nuclear Technology, who provided help in setting up 60Co Source Facility.

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Authors and Affiliations

  1. Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an, 710071, China

    Qian-Qiong Wang, Hong-Xia Liu, Shu-Peng Chen, Shu-Long Wang, Chen-Xi Fei & Dong-Dong Zhao

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  1. Qian-Qiong Wang
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  2. Hong-Xia Liu
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  3. Shu-Peng Chen
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  4. Shu-Long Wang
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Corresponding author

Correspondence to Hong-Xia Liu.

Additional information

This work is supported by the Project of National Natural Science Foundation of China (Grant Nos. 61376099, 11235008, 61434007) and the Specialized Research Fund for the Doctoral Program of High Education (Grant No. 20130203130002).

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Wang, QQ., Liu, HX., Chen, SP. et al. Effects of total dose irradiation on the threshold voltage of H-gate SOI NMOS devices. NUCL SCI TECH 27, 117 (2016). https://doi.org/10.1007/s41365-016-0110-x

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  • DOI: https://doi.org/10.1007/s41365-016-0110-x

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