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On-chip integrated GeSe2/Si vdW heterojunction for ultraviolet-enhanced broadband photodetection, imaging, and secure optical communication

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Abstract

Broadband photodetection, spanning from ultraviolet (UV) to infrared (IR), is pivotal in diverse technological domains including astronomy, remote sensing, environmental monitoring, and medical diagnostics. However, current commercially available broadband photodetectors, predominately based on conventional narrow-bandgap semiconductors, exhibit limited sensitivity in the UV region. This limitation, stemming from the significant energy disparity between the semiconductor bandgap and UV photon, narrows their application scope. Herein, we report an innovative approach involving the in-situ van der Waals (vdW) integration of two-dimensional (2D) GeSe2 layers onto a Si substrate. This process yields a high-quality GeSe2/Si vdW heterojunction device, which features a broad response range covering from UV to near-IR (NIR) with a greatly-enhanced sensitivity in the UV region. The device possesses high responsivities of 325 and 533.4 mA/W, large detectivities of 1.24 × 1013 and 2.57 × 1013 Jones, and fast response speeds of 20.6/82.1 and 17.7/81.0 µs under 360 and 980 nm, respectively. Notably, the broadband image sensing and secure invisible optical communication capabilities of the GeSe2/Si heterojunction device are demonstrated. Our work provides a viable approach for UV-enhanced broadband photodetection technology, opening up new possibilities and applications across various scientific and technological domains.

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Acknowledgements

This work was financially supported by the National Natural Science Foundation of China (Nos. 62374149, U2004165, and U22A20138) and Key Research Project for Higher Education Institutions in Henan Province (No. 24B140010).

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Authors and Affiliations

  1. School of Physics and Microelectronics, Key Laboratory of Material Physics Ministry of Education, Zhengzhou University, Zhengzhou, 450052, China

    Zhiman Zhou, Di Wu, Ranran Zhuo, Pei Lin, Zhifeng Shi, Yongtao Tian, Longhui Zeng & Xinjian Li

  2. Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, California, 92093, USA

    Kunxuan Liu & Yunrui Jiang

  3. Institute of Microelectronics and Integrated Circuits, School of Microelectronics, Hubei University, Wuhan, 430062, China

    Wei Han

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  1. Zhiman Zhou
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  2. Kunxuan Liu
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  3. Di Wu
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  9. Wei Han
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  10. Longhui Zeng
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Correspondence to Di Wu or Wei Han.

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12274_2024_6564_MOESM1_ESM.pdf

Electronic Supplementary Material: On-chip integrated GeSe2/Si vdW heterojunction for ultraviolet-enhanced broadband photodetection, imaging, and secure optical communication

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Zhou, Z., Liu, K., Wu, D. et al. On-chip integrated GeSe2/Si vdW heterojunction for ultraviolet-enhanced broadband photodetection, imaging, and secure optical communication. Nano Res. (2024). https://doi.org/10.1007/s12274-024-6564-x

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