Abstract
Photodetectors (PDs) based on two-dimensional (2D) materials are attracting considerable research interest due to the unique properties of 2D materials and their tunable spectral response. However, their performance is not outstanding enough, and the compatibility of their fabrication process with Si-complementary metal oxide semiconductor (CMOS) process flow needs evaluation. Here, we report an unprecedented high-performance, air-stable, self-driven, and broadband room-temperature PD based on the architecture of the PtSe2/ultrathin SiO2/Si heterojunction. The PD exhibits a very prominent responsivity of 8.06 A W−1, a truly high specific detectivity of 4.78 × 1013 cm Hz1/2 W−1, an extremely low dark current of 0.12 pA, and a fantastic photocurrent/dark current ratio of 1.29 × 109 at zero bias. The measured photocurrent responsivities at wavelengths of 375, 532, 1342, and 1550 nm are 2.12, 5.56, 18.12, and 0.65 mA W−1, respectively. Moreover, the fabricated 9 × 9 device array not only illustrates the very high uniformity and reproducibility of the PDs but also shows great potential in the field of ultraviolet-visiblenear infrared illumination imaging applications with a fabrication fully compatible with Si-CMOS technologies. Our design of the PtSe2/ultrathin SiO2/Si heterojunction PD greatly suppresses dark current, improves the diode ideality factor, and increases the potential barrier. Accordingly, it paves the way for a general strategy to enhance the performance of PDs used in novel optoelectronic applications.
摘要
因二维材料的独特性质及其可调谐的光谱响应, 基于二维材料 的光电探测器受到广泛关注. 然而, 它们的性能还不够突出, 其制造工 艺与硅基互补金属氧化物半导体技术工艺流程的兼容性还需要评估. 在本文中, 我们报道了一种基于二硒化铂/超薄二氧化硅/硅异质结构的 高性能、空气稳定、自驱动、室温宽带光电探测器. 该光电探测器表 现出超高的响应度( 8 . 0 6 A W − 1 ) 和比探测率( 4 . 7 8 × 1013 cm Hz1/2 W−1)、极低的暗电流(0.12 pA)以及优秀的开关比(1.29 × 109). 在375, 532, 1342和1550 nm波长处所测的光电流响应度分别为 2.12, 5.56, 18.12和0.65 mA W−1. 此外, 制造的9 × 9器件阵列不仅展示 了该探测器非常好的均匀性和可重复性, 而且还显示了其在紫外-可见- 近红外照明成像应用领域的潜力. 我们设计的二硒化铂/超薄二氧化硅/硅异质结光电探测器极大地抑制了暗电流, 提高了二极管的理想因子 并增加了界面势垒. 因此, 它为改善光电探测器性能的设计提供了一种 新策略.
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Acknowledgements
This work was supported by the National Natural Science Foundation of China (62090030/62090031, 51872257, and 51672244), the National Key R&D Program of China (2021YFA1200502), and the Natural Science Foundation of Zhejiang Province, China (LZ20F040001). The authors thank Dr. Yanjun Fang and Dr. Haiming Zhu for discussion.
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Ye P and Xu M conceived the idea and designed the experiments. Ye P performed the experiments with the assistance of Xiao H, Zhu Q, Kong Y, and Tang Y. Ye P and Xu M analyzed the data. Ye P and Xu M co-wrote the manuscript. All authors discussed the results.
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The authors declare that they have no conflict of interest.
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Supporting data are available in the online version of the paper.
Peng Ye received his BSc degree from Huazhong University of Science and Technology, China. He is currently a graduate student at the College of Information Science and Electronic Engineering, Zhejiang University, China. His main research interest focuses on photodetectors and photoelectronic devices based on 2D materials.
Mingsheng Xu is a full professor at the School of Micro-Nano Electronics/College of Information Science and Electronic Engineering, Zhejiang University. He earned his PhD degree from the Department of Electronic Engineering, The Chinese University of Hong Kong. His current main research includes 2D materials and devices.
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Ye, P., Xiao, H., Zhu, Q. et al. Si-CMOS-compatible 2D PtSe2-based self-driven photodetector with ultrahigh responsivity and specific detectivity. Sci. China Mater. 66, 193–201 (2023). https://doi.org/10.1007/s40843-022-2119-1
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DOI: https://doi.org/10.1007/s40843-022-2119-1