Overview
- Editors:
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Gianaurelio Cuniberti
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Institut für Theoretische Physik, Universität Regensburg, Regensburg, Germany
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Klaus Richter
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Institut für Theoretische Physik, Universität Regensburg, Regensburg, Germany
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Giorgos Fagas
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Nanotechnology Group, National Microelectronics Research Center (NMRC), Cork, Ireland
- Features basic knowledge of both theory and experiment
- Includes supplementary material: sn.pub/extras
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Table of contents (18 chapters)
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Introducing Molecular Electronics: A Brief Overview
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- Gianaurelio Cuniberti, Giorgos Fagas, Klaus Richter
Pages 1-10
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Theory
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- Joshua Jortner, Abraham Nitzan, Mark A. Ratner
Pages 13-54
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- Peter Hänggi, Sigmund Kohler, Jörg Lehmann, Michael Strass
Pages 55-75
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- Rosa Di Felice, Arrigo Calzolari, Daniele Varsano, Angel Rubio
Pages 77-116
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- K. Stokbro, J. Taylor, M. Brandbyge, H. Guo
Pages 117-151
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- A. Di Carlo, A. Pecchia, L. Latessa, Th. Frauenheim, G. Seifert
Pages 153-184
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- Neil Bushong, Massimiliano Di Ventra
Pages 185-205
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- Maarten R. Wegewijs, Matthias H. Hettler, Christian Romeike, Axel Thielmann, Katja Nowack, Jürgen König
Pages 207-228
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- M. Thorwart, R. Egger, M. Grifoni
Pages 229-249
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Experiment
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- Jan van Ruitenbeek, Elke Scheer, Heiko B. Weber
Pages 253-274
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- Wenyong Wang, Takhee Lee, Mark A. Reed
Pages 275-300
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- J. Tomfohr, G.K. Ramachandran, O.F. Sankey, S.M. Lindsay
Pages 301-312
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- Elsa Thune, Christoph Strunk
Pages 351-380
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- S. Heinze, J. Tersoff, Ph. Avouris
Pages 381-409
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- Danny Porath, Noa Lapidot, Julio Gomez-Herrero
Pages 411-444
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About this book
Klaus von Klitzing Max-Planck-Institut fur ¨ Festk¨ orperforschung, Heisenbergstraße 1, 70569 Stuttgart, Germany Already many Cassandras have prematurely announced the end of the silicon roadmap and yet, conventional semiconductor-based transistors have been continuously shrinking at a pace which has brought us to nowadays cheap and powerful microelectronics. However it is clear that the traditional scaling laws cannot be applied if unwanted tunnel phenomena or ballistic transport dominate the device properties. It is generally expected, that a combination of silicon CMOS devices with molecular structure will dominate the ?eld of nanoelectronics in 20 years. The visionary ideas of atomic- or molecular-scale electronics already date back thirty years but only recently advanced nanotechnology, including e.g. scanning tunneling methods and mechanically controllable break junctions, have enabled to make distinct progress in this direction. On the level of f- damentalresearch,stateofthearttechniquesallowtomanipulate,imageand probechargetransportthroughuni-molecularsystemsinanincreasinglyc- trolled way. Hence, molecular electronics is reaching a stage of trustable and reproducible experiments. This has lead to a variety of physical and chemical phenomena recently observed for charge currents owing through molecular junctions, posing new challenges to theory. As a result a still increasing n- ber of open questions determines the future agenda in this ?eld.