Abstract
Carbon nanotube field-effect transistors (CNFETs) are already competitive in some respects with state-of-the-art silicon transistors, and are promising candidates for future nanoelectronic devices. However, it is dificult to form ohmic contacts to carbon nanotubes, and most of the CNFETs reported to date operate as Schottky barrier transistors rather than conventional FETs. The electrostatics at the contact of a metal to a nanotube leads to device behavior very different from conventional transistors. In this article we discuss the consequences of Schottky barriers in CNFETs with respect to the scaling of transistor performance with reduced device size and the application of CNFETs as optoelectronic devices.
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Heinze, S., Tersoff, J., Avouris, P. (2006). Carbon Nanotube Electronics and Optoelectronics. In: Cuniberti, G., Richter, K., Fagas, G. (eds) Introducing Molecular Electronics. Lecture Notes in Physics, vol 680. Springer, Berlin, Heidelberg . https://doi.org/10.1007/3-540-31514-4_15
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DOI: https://doi.org/10.1007/3-540-31514-4_15
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