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Proceedings of the 17th International Conference on the Physics of Semiconductors

San Francisco, California, USA August 6–10, 1984

  • Conference proceedings
  • © 1985

Overview

Editors:
  1. James D. Chadi

    1. Xerox Palo Alto Research Center, Palo Alto, USA

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  2. Walter A. Harrison

    1. Department of Applied Physics W.W. Hansen Laboratories, Stanford University, Stanford, USA

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Table of contents (353 papers)

  1. Surfaces

    1. Chemisorption at Surfaces

      1. Surface Structure of Semiconductors from Extended X-Ray Absorption Fine Structure
        • J. E. Rowe, P. H. Citrin
        Pages 89-94
      2. Theory of the Si (111) ✓3x✓3- Al Surface
        • John E. Northrup
        Pages 95-98
      3. Investigation of the Si(111) Surface in UHV: Oxidation and the Effect of Surface Phosphorus
        • H. W. K. Tom, X. D. Zhu, Y. R. Shen, G. A. Somorjai
        Pages 99-102
      4. Adsorption of Alkali Metals on Si (111) Surface
        • R. Avci, O. B. Dabbousi, M. S. Jazzar
        Pages 103-107
      5. Surface Vibrational Studies of Chemisorption on Silicon
        • M. K. Kelly, G. Margaritondo, M. N. Piancastelli, J. Anderson, D. J. Frankel, G. J. Lapeyre
        Pages 109-112
      6. Surface Electronic Structure Change by Cs Adsorption on Si(111)2x1
        • Hiroshi Tochihara, Masakazu Kubota, Masahiro Miyao, Yoshitada Murata
        Pages 113-116
      7. The Thermal Desorption Spectra Study of Hydrogen Chemisorption on Si(100) Clean Surface
        • Jin Xiaofeng, Feng Yiqing, Zhuang Chengqun, Wang Xun
        Pages 117-120
      8. Chemisorptions of Ag, Cu and Au on Si(111) and Ge(111) Surfaces
        • Che Jinguang, Zhang Kaiming, Xie Xide
        Pages 121-124
      9. Hydrogen Adsorption on α-Sn and InSb Studied by Leels
        • I. Hernández-Calderón
        Pages 125-128
      10. Growth and Characterization of Sb Overlayers on InP(110)
        • K. Li, C. R. Bonapace, A. Kahn
        Pages 129-132
      11. GaAs (110)+Sb,p(1x1): A Case Study of Adatom Adsorption on Compound Semiconductor Surfaces
        • J. R. Myron, J. Anderson, G. J. Lapeyre
        Pages 133-136
      12. Laser Induced Chemical Reactions at the Al III-V Semiconductor Interface
        • H. W. Richter, L. J. Brillson
        Pages 137-140

  2. Interfaces

    1. Front Matter

      Pages 141-141
      Download chapter PDF

    2. Metal Semiconductor Interfaces

      1. Initial Steps of Metal-Silicon Interface Formation
        • C. A. Sebenne
        Pages 143-148
      2. Progress of Synchrotron Radiation Spectroscopy for the Study of Condensed Interfaces: New Methods and Some Results
        • Giorgio Rossi
        Pages 149-154
      3. Thin Film Kinetics and Reactions at Metal-Silicon Interfaces
        • R. J. Nemanich, B. L. Stafford, J. R. Abelson, T. W. Sigmon
        Pages 155-158
      4. Pb/Ge(111): Formation of the Interface Under Thermodynamic Equilibrium
        • G. le Lay, Z. Imam
        Pages 159-162
      5. Ionic Contribution to Silicon-Metal Bonding: Si(111)-Ca Interface Reactions
        • A. Franciosi, J. H. Weaver
        Pages 163-165
      6. Resonant Photoemission as a Local Probe for Interface — An Application to Al-GaAs(110)
        • K. L. K. Kobayashi, N. Watanabe, H. Nakashima, M. Kubota, H. Daimon, Y. Murata
        Pages 167-170
      7. Dislocation Mediated Melting of Silicon-Metal Interfaces
        • B. K. Chakraverty
        Pages 171-174
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Keywords

About this book

The Proceedings of the 17th International Conference on the Physics of Semiconductors are contained in this volume. A record 1050 scientists from 40 countries participated in the Conference which was held in San Francisco August 6·1 0, 1984. The Conference was organized by the ICPS Committee and sponsored by the International Union of Pure and Applied Physics and other professional, government, and industrial organizations listed on the following pages. Papers representing progress in all aspects of semiconductor physics were presented. Far more abstracts (765) than could be presented in a five-day meeting were considered by the International Program Committee. A total of 350 papers, consisting of 5 plenary, 35 invited, and 310 contributed, were presented at the Conference in either oral or poster sessions. All but a few of the papers were submitted and have been included in these Proceedings. An interesting shift in subject matter, in comparison with earlier Conferences, is manifested by the large number of papers on surfaces, interfaces, and quantum wells. To facilitate the use of the Proceedings in finding closely related papers among the sometimes relatively large number of contributions within a main subject area, we chose not to arrange the papers strictly according to the Conference schedule. We have organized the book, as can be seen from the Contents, into specific subcategories and subdivisions within each major category. Plenary and invited papers have been placed together with the appropriate contributed papers.

Editors and Affiliations

  • Xerox Palo Alto Research Center, Palo Alto, USA

    James D. Chadi

  • Department of Applied Physics W.W. Hansen Laboratories, Stanford University, Stanford, USA

    Walter A. Harrison

Bibliographic Information

  • Book Title: Proceedings of the 17th International Conference on the Physics of Semiconductors

  • Book Subtitle: San Francisco, California, USA August 6–10, 1984

  • Editors: James D. Chadi, Walter A. Harrison

  • DOI: https://doi.org/10.1007/978-1-4615-7682-2

  • Publisher: Springer New York, NY

  • eBook Packages: Springer Book Archive

  • Copyright Information: Springer Science+Business Media New York 1985

  • Softcover ISBN: 978-1-4615-7684-6Published: 18 January 2014

  • eBook ISBN: 978-1-4615-7682-2Published: 01 December 2013

  • Edition Number: 1

  • Number of Pages: LXXII, 1656

  • Number of Illustrations: 107 b/w illustrations

  • Topics: Condensed Matter Physics

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