Overview
- Editors:
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James D. Chadi
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Xerox Palo Alto Research Center, Palo Alto, USA
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Walter A. Harrison
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Department of Applied Physics W.W. Hansen Laboratories, Stanford University, Stanford, USA
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About this book
The Proceedings of the 17th International Conference on the Physics of Semiconductors are contained in this volume. A record 1050 scientists from 40 countries participated in the Conference which was held in San Francisco August 6·1 0, 1984. The Conference was organized by the ICPS Committee and sponsored by the International Union of Pure and Applied Physics and other professional, government, and industrial organizations listed on the following pages. Papers representing progress in all aspects of semiconductor physics were presented. Far more abstracts (765) than could be presented in a five-day meeting were considered by the International Program Committee. A total of 350 papers, consisting of 5 plenary, 35 invited, and 310 contributed, were presented at the Conference in either oral or poster sessions. All but a few of the papers were submitted and have been included in these Proceedings. An interesting shift in subject matter, in comparison with earlier Conferences, is manifested by the large number of papers on surfaces, interfaces, and quantum wells. To facilitate the use of the Proceedings in finding closely related papers among the sometimes relatively large number of contributions within a main subject area, we chose not to arrange the papers strictly according to the Conference schedule. We have organized the book, as can be seen from the Contents, into specific subcategories and subdivisions within each major category. Plenary and invited papers have been placed together with the appropriate contributed papers.
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Table of contents (353 papers)
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Interfaces
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Metal Semiconductor Interfaces
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- J. Kanicki, M. Osama Aboelfotoh, W. Bauhofer
Pages 183-187
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- Otto F. Sankey, Roland E. Allen, John D. Dow
Pages 189-192
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- J. C. Hensel, R. T. Tung, J. M. Poate, F. C. Unterwald
Pages 197-200
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- J. Nogami, C. Carbone, J. J. Yeh, I. Lindau, S. Nannarone
Pages 201-204
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- F. Schäffler, H. Brugger, G. Abstreiter
Pages 205-208
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Semiconductor-Semiconductor and Insulator-Semiconductor Interface
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- J. P. Vigneron, A. A. Lucas, P. A. Thiry, M. Liehr, J. J. Pireaux, R. Caudano
Pages 209-212
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- M. H. Hecht, P. J. Grunthaner, F. J. Grunthaner
Pages 217-220
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- L. D. Jackel, W. J. Skocpol, R. E. Howard, L. A. Fetter, R. W. Epworth, D. M. Tennant
Pages 221-224
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- R. Schachter, D. J. Olego, J. A. Baumann, C. G. Michel, M. A. Kuck, L. G. Polgar et al.
Pages 225-228
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- Takeo Hattori, Masaaki Muto, Toshihisa Suzuki
Pages 229-232
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- P. Perfetti, F. Sette, C. Quaresima, C. Capasso, A. Savoia, F. Patella et al.
Pages 233-236
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Quantum Wells
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Front Matter
Pages 245-245
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Quantum Hall Effect
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- H. L. Störmer, A. M. Chang, D. C. Tsui, J. C. M. Hwang
Pages 267-270
Editors and Affiliations
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Xerox Palo Alto Research Center, Palo Alto, USA
James D. Chadi
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Department of Applied Physics W.W. Hansen Laboratories, Stanford University, Stanford, USA
Walter A. Harrison