Abstract
We have used pulsed laser annealing to produce highly localized chemical reactions at the interface between Al and various III-V semiconductors. We employed soft X-ray spectroscopy, Auger-electron spectroscopy and sputter depth profiling to characterize the interfacial chemical composition. From the variation of reaction threshold with the semiconductor substrate, we find that melting of both a thin layer of III-V compound and the metal overlayer initiates the chemical reaction.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
L. J. Brillson, Surf. Sci. Repts. 2, 123 (1982);
L. J. Brillson, J. Phys. Chem. Solids 44, 703 (1983).
G. Margaritondo, Solid State Electron. 26, 499 (1983).
R. H. Williams, Contemp. Phys. 23, 329 (1982).
G. Foti, E. Rimini, in “Laser-Annealing of Semiconductors”, ed. J. M. Poate and J. W. Mayer (Academic Press, New York, 1982) p.203.
J. S. Williams, in “Laser Annealing of Semiconductors”, ed. J. M. Poate and J. W. Mayer (Academic Press, New York, 1982) p. 383.
Gold, R. B. Powell, R. A., and Gibbons, J. F. in “Laser-Solid Interactions and Laser Processing”, ed. S. D. Ferris, H. J. Leamy, and J. M. Poate (Am. Inst. Phys. New York, 1979) p. 635.
Barnes, P. A., Leamy, H. J., Ferris, S. D., Williams, J. S., and Celler, G. K., in “Laser-Solid Interactions and Laser Processing”, ed. S. D. Ferris, H. J. Leamy, and J. M. Poate (Am. Inst. Phys., New York, 1979) p. 647.
Kirkpatrick, A. R., In “Laser and Electron Beam Processing of Electronic Materials”, ed. C. L. Anderson, G. K. Celler, and G. A. Rozgonyi (Electrochem. Soc., Pennington, New Jersey, 1980) p. 108.
L. E. Davis, N. C. MacDonaId, P. W. Palmberg, G. E. Riach. and R. E. Weber, “Handbook of Auger Electron Spectroscopy”, Physical Electronics Industries, Minnesota, 1976.
H. W. Richter, L. J. Brillson, M. K. Kelly, R. R. Daniels, and G. Margaritondo, J. Vac. Sci. Technol. B., In press.
Y. Shapira, and L. J. Brillson, J. Vac. Sci. Technol. B1, 618 (1983).
D. Landolt-Bornstein, “Numerical Data and Functional Relationships in Science and Technology”, Group III, Vol. 17a, Berlin, 1982.
L. J. Brillson, Phys. Rev. Lett., 40, 260 (1978).
American Insitute of Physics Handbook, ed. D. E. Gray(New York, 1972).
P. Baeri, and S. U. Campisano, in “Laser Annealing of Semiconductors”, ed. J. M. Poate and J. W. Mayer (Academic Press, New York, 1982) p. 75
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1985 Springer Science+Business Media New York
About this paper
Cite this paper
Richter, H.W., Brillson, L.J. (1985). Laser Induced Chemical Reactions at the Al III-V Semiconductor Interface. In: Chadi, J.D., Harrison, W.A. (eds) Proceedings of the 17th International Conference on the Physics of Semiconductors. Springer, New York, NY. https://doi.org/10.1007/978-1-4615-7682-2_30
Download citation
DOI: https://doi.org/10.1007/978-1-4615-7682-2_30
Publisher Name: Springer, New York, NY
Print ISBN: 978-1-4615-7684-6
Online ISBN: 978-1-4615-7682-2
eBook Packages: Springer Book Archive