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High density plasma etching of platinum films in BCl3/Ar and CF4/Ar inductively coupled plasmas

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Abstract

The etch characteristics of platinum films and the etch selectivities for platinum over the mask materials in BCl3/Ar and CF4/Ar ICP discharges have been investigated to establish a process window for the thick platinum structure formation in MEMS devices. Maximum etch rates of ≈1800 Å/minute and ≈1200 Å/minute were obtained at a moderate ICP source power (750 W) and a relatively high rf chuck power (400 W) condition for CF4/Ar and BCl3/Ar ICP discharges, respectively. Maximum etch selectivities of ≈2.6 for platinum over Al and of ≈2.1 for platinum over ZnO were obtained. CF4/Ar ICP etching with aluminum mask layer seems to be a very attractive tool for the fabrication of MEMS devices containing a thick platinum structure layer.

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Authors and Affiliations

  1. Department of Nanosystem and Nanoprocess Engineering, Pusan National University, 627-706, Gyeongnam, Korea

    Jong Cheon Park, Jong-Man Kim, Jin Kon Kim & Hyun Cho

  2. Department of Nanomedical Engineering, Pusan National University, 627-706, Gyeongnam, Korea

    Sungu Hwang

  3. School of Nano & Advanced Materials Engineering, Changwon National University, 641-773, Gyeongnam, Korea

    Eun-Hee Kim & Yeon-Gil Jung

Authors
  1. Jong Cheon Park
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  2. Sungu Hwang
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  3. Jong-Man Kim
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  4. Jin Kon Kim
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  5. Eun-Hee Kim
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  6. Yeon-Gil Jung
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  7. Hyun Cho
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Correspondence to Hyun Cho.

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Park, J.C., Hwang, S., Kim, JM. et al. High density plasma etching of platinum films in BCl3/Ar and CF4/Ar inductively coupled plasmas. Electron. Mater. Lett. 5, 205–208 (2009). https://doi.org/10.3365/eml.2009.12.205

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  • DOI: https://doi.org/10.3365/eml.2009.12.205

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