Abstract
A decrease in the resonance frequency of plasma oscillations of free carriers ωp, observed in p-type Bi2 – xSbx (0 < x < 2) crystals with increasing temperature, can only partially be explained by an increase in the crystal-polarization background ε∞. An analysis of experimental data suggests that the temperature change in ωp observed in the range from 80 to 300 K is also due to a decrease in the ratio of the concentration of free carriers to their effective mass p/m*. This can be explained by an increase in the carrier effective mass with increasing temperature, as well as by the process of hole redistribution between nonequivalent valence-band extrema, whose existence is confirmed by the regularities of temperature changes in the width of the optical band gap, observed in the infrared reflection spectra.
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Translated by A. Kazantsev
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Stepanov, N.P., Kalashnikov, A.A. & Uryupin, O.N. Band Structure and Processes in the Electronic System of (Bi2 – xSbx)Te3 (0 < x < 2) Crystals, According to Optical Studies in the Infrared Range. Semiconductors 55, 637–641 (2021). https://doi.org/10.1134/S1063782621070186
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DOI: https://doi.org/10.1134/S1063782621070186