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Revisiting the Nature of the Anomalous Temperature Dependence of the Hall Coefficient Observed for Semiconductor Crystals of Bi2Te3–Sb2Te3 Solid Solutions

  • ELECTRONIC PROPERTIES OF SEMICONDUCTORS
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Abstract

It is shown based on analysis of the results of experimental investigations that a certain process that provides an increase in the electrical conductivity in the range from 4.2 to 15 K intensifies for some Bi2Te3–Sb2Te3 crystals, for which the electrical conductivity exceeds 1.5 × 106 S/m. The subsequent decrease in the electrical conductivity with an increase in temperature from 15 K and up to the beginning of domination of the intrinsic conductivity, which is accompanied by an anomalous increase in the Hall coefficient, can be partially caused by a decrease in this process intensity. The assumption is formulated that the influence of plasmon–phonon–polaritons under the conditions of approaching the plasmon energy and band-gap width is able to provide the inverse polarization effect, which is the basis of this process.

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Correspondence to N. P. Stepanov.

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Translated by N. Korovin

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Stepanov, N.P. Revisiting the Nature of the Anomalous Temperature Dependence of the Hall Coefficient Observed for Semiconductor Crystals of Bi2Te3–Sb2Te3 Solid Solutions. Semiconductors 54, 11–14 (2020). https://doi.org/10.1134/S1063782620010224

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  • DOI: https://doi.org/10.1134/S1063782620010224

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