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Regularities of Temperature Changes in IR Reflection Spectra of a Bi0.8Sb1.2Te3 Crystal in the Region of Excitation of Free-Carrier Plasma Oscillations and Interband Transitions

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Abstract

Regularities of temperature behavior of the reflection spectra of a Bi0.8Sb1.2Te3 crystal, recorded in the region of manifestation of free-carrier plasma resonance and fundamental absorption edge, allow one to trace for a change in plasmon energy Ep and optical band gap Eg opt. The observed decrease in Eg opt with an increase in temperature corresponds to the known concepts of hole redistribution between nonequivalent extrema of the valence band in (Bi2 – xSbx)Te3 crystals (0 < x < 1). Dominance of this process in a certain temperature range contributes to the change in plasma frequencies.

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Authors and Affiliations

  1. Transbaikal State University, 672036, Chita, Russia

    N. P. Stepanov

  2. Transbaikal Institute of Railway Transport, 672040, Chita, Russia

    A. A. Kalashnikov

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  1. N. P. Stepanov
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  2. A. A. Kalashnikov
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Correspondence to N. P. Stepanov.

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Translated by A. Sin’kov

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Stepanov, N.P., Kalashnikov, A.A. Regularities of Temperature Changes in IR Reflection Spectra of a Bi0.8Sb1.2Te3 Crystal in the Region of Excitation of Free-Carrier Plasma Oscillations and Interband Transitions. Opt. Spectrosc. 129, 700–705 (2021). https://doi.org/10.1134/S0030400X21050155

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  • DOI: https://doi.org/10.1134/S0030400X21050155

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