Skip to main content
Log in

Features of the Luminescence Spectra of ZnSe ⋅ O Crystals in Band Anticrossing Theory

  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

The effect of the structural features of self-activated zinc selenide and crystals with activators on the emission spectra is investigated in band anticrossing theory. Numerous contradictory published data make it difficult to understand this issue. Band anticrossing theory in its current statement requires taking into account the effect of the isoelectronic oxygen impurity, which inevitably exists in the ZnSe lattice, on the band structure. The development of methods for calculating the equilibrium of intrinsic point defects suggests the use of these data in analyzing the optical properties of AII–BIV compounds, including zinc selenide. The study is aimed at examining the features and nature of individual luminescence bands widely used to obtain information about crystal quality. The photoluminescence, cathodoluminescence, and pulsed luminescence spectra, as well as the excitation and stimulated emission spectra of ZnSe are investigated with the use of these features in a single context, taking into account the noted features. The stable states of crystals with stacking faults upon embedding activators or a background copper impurity are established. The data are of interest for the diagnostics of crystals applicable in lasers.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Fig. 1.
Fig. 2.
Fig. 3.
Fig. 4.
Fig. 5.
Fig. 6.
Fig. 7.

Similar content being viewed by others

Notes

  1. OSe is oxygen dissolved at ZnSe lattice sites. The defect charged states 0, +, ++, – –, and — correspond to the designations ×, •, ••, //, and / [9, 10].

  2. Upon ion doping, the exciton band of the initial crystal at 447 nm is blurred and the maximum appearing at 468 nm is related to the manifestation of AexZnO. The oxygen content in the initial substrate is ~2 × 1019 cm–3, since Aex of pure ZnSe at 100 K corresponds to ~445 nm.

  3. In the exciton region of the spectrum, a band at 470 nm forms, the spectral position of which is determined by the limiting concentration [OSe] in the CVD ZnSe SF layers [11]. Spontaneous exciton emission at 470 nm in the CL spectra is weak and, at a high excitation density, the PCL sharply increases and passes to the stimulated emission mode.

REFERENCES

  1. W. Walukiewicz, W. Shan, K. M. Yu, M. J. Seong, H. Alawadhi, and A. K. Ramdas, Phys. Rev. Lett. 85, 1552 (2000).

    Article  ADS  Google Scholar 

  2. Jingbo Li and Su-Huai Wei, Phys. Rev. B 73, 041201 (2006).

    Article  ADS  Google Scholar 

  3. W. Shan, W. Walukiewicz, K. M. Yu, E. E. Haller, and Y. Nabetani, Appl. Phys. Lett. 83, 299 (2003).

    Article  ADS  Google Scholar 

  4. M. A. Mayer, Kin Man Yu, E. E. Haller, and W. Walukiewicz, J. Appl. Phys. 111 (11), 113 (2012).

    Article  Google Scholar 

  5. K. M. Yu, W. Walukiewicz, J. Wu, and W. Shan, Phys. Rev. Lett. 91, 246403 (2003).

    Article  ADS  Google Scholar 

  6. N. K. Morozov, L. A. Mideros, and N. D. Danilevich, Oxygen in Optic of Compounds II–VI of Theory Anticrossing Zones (LAP, Saarbrücken, 2013), p. 205.

    Google Scholar 

  7. N. K. Morozov, Sci. Eur. 1 (52), 28 (2020).

    Google Scholar 

  8. N. K. Morozov, Sci. Eur. 1 (56), 21 (2020).

    Google Scholar 

  9. N. K. Morozov, Sci. Eur. 1 (59), 57 (2020).

    Google Scholar 

  10. M. Aven and J. S. Prener, Physics and Chemistry of II–VI Compounds (North-Holland, Amsterdam, 1967).

    Google Scholar 

  11. D. A. Mideros, Cand. Sci. Dissertation (Mosc. Power Eng. Inst. Moscow, 2008).

  12. J. D. Perkins, A. Mascarenhas, J. F. Geisz, and D. J. Friedman, Phys. Rev. Lett. 82, 3312 (1999).

    Article  ADS  Google Scholar 

  13. N. K. Morozova and I. N. Miroshnikova, Semiconductors 54, 102 (2020).

    Article  ADS  Google Scholar 

  14. V. I. Oleshko, Doctoral Dissertation (TPU, Tomsk, 2009).

  15. V. I. Oleshko, V. F. Tarasenko, M. V. Erofeev, and S. S. Vil’chinskaya, Russ. Phys. J. 63, 311 (2020).

  16. N. K. Morozova, Sci. Eur. 2 (54), 28 (2020).

    Google Scholar 

  17. V. V. Blinov, Cand. Sci. Dissertation (Mosc. Power Eng. Inst. Moscow, 2003).

  18. N. K. Morozova, D. A. Mideros, E. M. Gavrishchuk, and V. G. Galstyan, Semiconductors 42, 131 (2008).

    Article  ADS  Google Scholar 

Download references

Funding

This study was supported by the Development Program of the National Research Tomsk Polytechnic University.

Author information

Authors and Affiliations

Authors

Corresponding authors

Correspondence to V. I. Oleshko or N. K. Morozova.

Ethics declarations

The authors declare that they have no conflict of interest.

Additional information

Translated by E. Bondareva

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Oleshko, V.I., Vilchinskaya, S.S. & Morozova, N.K. Features of the Luminescence Spectra of ZnSe ⋅ O Crystals in Band Anticrossing Theory. Semiconductors 55, 511–517 (2021). https://doi.org/10.1134/S1063782621050110

Download citation

  • Received:

  • Revised:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063782621050110

Keywords:

Navigation