Skip to main content
Log in

Study of the Effect of Doping with Iron on the Luminescence of Zinc-Selenide Single Crystals

  • ELECTRONIC PROPERTIES OF SEMICONDUCTORS
  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

The effect of doping with iron (thermal diffusion from a surface) on the luminescence of zinc-selenide single crystals in the wavelength range 0.44–0.72 μm and on the spatial distribution of luminescence centers are studied. By means of two-photon confocal microscopy, planar and volume maps of edge (exciton) and impurity–defect luminescence in the above-indicated spectral range are obtained for both doped and undoped crystals. It is shown that crystal regions containing a high iron concentration exhibit low-intensity luminescence in this range. It is found that, in the process of diffusion, several types of impurity–defect centers distributed in a complex way within the crystal bulk are formed. The nature of these centers is discussed.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Fig. 1.
Fig. 2.
Fig. 3.
Fig. 4.
Fig. 5.
Fig. 6.

Similar content being viewed by others

REFERENCES

  1. S. Mirov, V. Fedorov, D. Martyshkin, I. Moskalev, M. Mirov, and S. Vasilyev, IEEE J. Sel. Top. Quantum Electron. 21, 1 (2015).

    Article  Google Scholar 

  2. K. N. Firsov, E. M. Gavrishchuk, S. U. Kazantsev, I. G. Kononov, and S. A. Rodin, Laser Phys. Lett. 11, 085001 (2014).

    Article  ADS  Google Scholar 

  3. D. V. Martyshkin, D. V. Fedorov, M. Mirov, I. Moskalev, S. Vasilyev, and S. B. Mirov, in Proceedings of the International Conference on Laser Science to Photonic Applications CLEO, San Jose, US, 2015, OSA Tech. Digest (Opt. Soc. Am., 2015), paper SF1F.2.

  4. E. M. Gavrishchuk, V. B. Ikonnikov, S. Yu. Kazantsev, I. G. Kononov, S. A. Rodin, D. V. Savin, N. A. Timofeeva, and K. N. Firsov, Quantum Electron. 45, 823 (2015).

    Article  ADS  Google Scholar 

  5. D. V. Savin, E. M. Gavrishchuk, V. B. Ikonnikov, O. N. Eremeykin, and A. S. Egorov, Quantum Electron. 45, 8 (2015).

    Article  ADS  Google Scholar 

  6. A. A. Gladilin, E. S. Gulyamova, V. P. Danilov, N. N. Il’ichev, V. P. Kalinushkin, I. N. Odin, P. P. Pashinin, R. R. Rezvanov, A. V. Sidorin, M. I. Studenikin, V. A. Chapnin, and M. V. Chukichev, Quantum Electron. 46, 545 (2016).

    Article  ADS  Google Scholar 

  7. J. Peppers, V. V. Fedorov, and S. B. Mirov, Opt. Express 23, 4406 (2015).

    Article  ADS  Google Scholar 

  8. V. P. Kalinushkin and O. V. Uvarov, Tech. Phys. 61, 1876 (2016).

    Article  Google Scholar 

  9. E. M. Gavrishchuk, A. A. Gladilin, V. P. Danilov, V. B. Ikonnikov, N. N. Il’ichev, V. P. Kalinushkin, A. V. Ryabova, M. I. Studenikin, N. A. Timofeeva, O. V. Uvarov, and V. A. Chapnin, Inorg. Mater. 52, 1108 (2016).

    Article  Google Scholar 

  10. Yu. V. Korostelin, V. I. Koslovsky, A. S. Nasibov, and P. V. Shapkin, J. Cryst. Growth 161, 651 (1966).

    Google Scholar 

  11. Yu. V. Korostelin, V. I. Koslovsky, A. S. Nasibov, and P. V. Shapkin, J. Cryst. Growth 197, 449 (1999).

    Article  ADS  Google Scholar 

  12. D. D. Nedeoglo and A. V. Simashkevich, Electric and Luminescent Properties of Zinc Selenide (Shtiintsa, Kishinev, 1984) [in Russian].

  13. F. S. Rong, W. A. Barry, J. F. Donegan, and G. D. Watkins, Phys. Rev. B 54, 7779 (1996).

    Article  ADS  Google Scholar 

  14. L. L. Kulyuk, R. Laiho, A. V. Lashkul, E. Lahderanta, D. D. Nedeoglo, and I. V. Radevici, Phys. B (Amsterdam, Neth.) 405, 4330 (2010).

  15. M. Surma, M. Godlewski, and T. R. Surkova, Phys. Rev. B 50, 8319 (1994).

    Article  ADS  Google Scholar 

  16. M. Tabei, S. Shionoya, and H. Ohmatsu, Jpn. J. Appl. Phys. 14, 240 (1975).

    Article  ADS  Google Scholar 

  17. Yu. F. Vaksman, Yu. A. Nitsuk, V. V. Yatsun, A. S. Nasibov, and P. V. Shapkin, Semiconductors 45, 1129 (2011).

    Article  ADS  Google Scholar 

Download references

ACKNOWLEDGMENTS

The study was supported by the Presidium of the Russian Academy of Sciences, programs no. 7 “Topical Problems of Photonics; Probing of Inhomogeneous Media and Materials” and “Fundamentals of Advanced Double-Purpose Technologies in the Interests of National Security”, project “Analysis of the Possibility of Producing ZnSe:Fe-Based High-Efficiency IR Lasers (4–5 μm) Operating on the Impact Excitation of Activator Ions with Hot Electrons”.

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to A. A. Gladilin.

Additional information

Translated by E. Smorgonskaya

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Gladilin, A.A., Ilichev, N.N., Kalinushkin, V.P. et al. Study of the Effect of Doping with Iron on the Luminescence of Zinc-Selenide Single Crystals. Semiconductors 53, 1–8 (2019). https://doi.org/10.1134/S106378261901007X

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S106378261901007X

Navigation