Abstract
The effect of doping with iron (thermal diffusion from a surface) on the luminescence of zinc-selenide single crystals in the wavelength range 0.44–0.72 μm and on the spatial distribution of luminescence centers are studied. By means of two-photon confocal microscopy, planar and volume maps of edge (exciton) and impurity–defect luminescence in the above-indicated spectral range are obtained for both doped and undoped crystals. It is shown that crystal regions containing a high iron concentration exhibit low-intensity luminescence in this range. It is found that, in the process of diffusion, several types of impurity–defect centers distributed in a complex way within the crystal bulk are formed. The nature of these centers is discussed.
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ACKNOWLEDGMENTS
The study was supported by the Presidium of the Russian Academy of Sciences, programs no. 7 “Topical Problems of Photonics; Probing of Inhomogeneous Media and Materials” and “Fundamentals of Advanced Double-Purpose Technologies in the Interests of National Security”, project “Analysis of the Possibility of Producing ZnSe:Fe-Based High-Efficiency IR Lasers (4–5 μm) Operating on the Impact Excitation of Activator Ions with Hot Electrons”.
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Translated by E. Smorgonskaya
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Gladilin, A.A., Ilichev, N.N., Kalinushkin, V.P. et al. Study of the Effect of Doping with Iron on the Luminescence of Zinc-Selenide Single Crystals. Semiconductors 53, 1–8 (2019). https://doi.org/10.1134/S106378261901007X
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DOI: https://doi.org/10.1134/S106378261901007X