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Investigation of the Current–Voltage Characteristics of New MnO2/GaAs(100) and V2O5/GaAs(100) Heterostructures Subjected to Heat Treatment

  • SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA
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Abstract

Complex oxide films with a thickness of about 200 nm are formed during the thermal oxidation of GaAs with magnetron-deposited V2O5 and MnO2 nanolayers. The electrical parameters of the films (reverse-bias breakdown voltage and current density) are determined by the method of current–voltage (I–V) characteristics at room temperature in the bias range from –5 to +5 V, and their composition and surface morphology are investigated. It is shown that V2O5 facilitates the more intense (in comparison with MnO2) chemical bonding of arsenic at the internal interface with the formation of As2O5. As a result, thermally oxidized V2O5/GaAs heterostructures exhibit higher breakdown voltages.

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ACKNOWLEDGMENTS

The results were partially obtained using equipment of the Center of Collective Use of Voronezh State University (url: http://ckp.vsu.ru).

Funding

This study was supported by the Russian Foundation for Basic Research, project no. 18-03-00354a.

The study was carried out in correspondence with a State assignment for the Ioffe Institute in the part concerning the development of post-growth technology and the experimental investigation of heterostructures.

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Authors and Affiliations

  1. Voronezh State University, 394018, Voronezh, Russia

    B. V. Sladkopevtsev, I. Ya. Mittova, E. V. Tomina, A. A. Samsonov & P. V. Kostenko

  2. Voronezh State University of Engineering Technologies, 394036, Voronezh, Russia

    G. I. Kotov & I. S. Shashkin

  3. Ioffe Institute, 194021, St. Petersburg, Russia

    I. N. Arsentyev

Authors
  1. B. V. Sladkopevtsev
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  2. G. I. Kotov
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  3. I. N. Arsentyev
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  4. I. S. Shashkin
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  5. I. Ya. Mittova
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  6. E. V. Tomina
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  7. A. A. Samsonov
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  8. P. V. Kostenko
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Corresponding authors

Correspondence to B. V. Sladkopevtsev, I. N. Arsentyev or I. S. Shashkin.

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The authors declare that they have no conflict of interest.

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Translated by Yu. Sin’kov

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Sladkopevtsev, B.V., Kotov, G.I., Arsentyev, I.N. et al. Investigation of the Current–Voltage Characteristics of New MnO2/GaAs(100) and V2O5/GaAs(100) Heterostructures Subjected to Heat Treatment. Semiconductors 53, 1054–1059 (2019). https://doi.org/10.1134/S1063782619080177

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  • DOI: https://doi.org/10.1134/S1063782619080177

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