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Preparation of Dielectric Films via Thermal Oxidation of MnO2/GaAs

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Inorganic Materials Aims and scope

Abstract—

MnO2 nanolayers (~29 nm) produced on the surface of single-crystal GaAs wafers by magnetron sputtering have been shown to act as oxygen transfer agents for the thermal oxidation of the semiconductor. The presence of MnO2 increases the oxide film growth rate by three to nine times relative to stimulator-free oxidation of GaAs. The films thus grown range in thickness from 35 to 200 nm and possess good dielectric properties (resistivity on the order of ~1010 Ω cm and dielectric strength in the range (5–8) × 106 V/cm). According to X-ray diffraction data, the films are enriched in oxidized arsenic and have a regular grain structure in the surface layer, with a roughness height within 30 nm (according to atomic force microscopy data).

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ACKNOWLEDGMENTS

This research was supported by the Russian Foundation for Basic Research, grant no. 18-03-00354a. In our work we used equipment at the Shared Research Facilities Center, Voronezh State University. We are grateful to A.S. Chizhov (Department of Inorganic Chemistry, Faculty of Chemistry, Moscow State University) for studying the electrical transport properties of the samples.

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Authors and Affiliations

  1. Voronezh State University, Universitetskaya pl. 1, 394018, Voronezh, Russia

    I. Ya. Mittova, B. V. Sladkopevtsev, E. V. Tomina, A. A. Samsonov, N. N. Tretyakov & S. V. Ponomarenko

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  1. I. Ya. Mittova
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  2. B. V. Sladkopevtsev
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  3. E. V. Tomina
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  4. A. A. Samsonov
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  5. N. N. Tretyakov
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  6. S. V. Ponomarenko
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Correspondence to B. V. Sladkopevtsev.

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Translated by O. Tsarev

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Mittova, I.Y., Sladkopevtsev, B.V., Tomina, E.V. et al. Preparation of Dielectric Films via Thermal Oxidation of MnO2/GaAs. Inorg Mater 54, 1085–1092 (2018). https://doi.org/10.1134/S0020168518110109

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  • DOI: https://doi.org/10.1134/S0020168518110109

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