Abstract
The possibility of synthesizing integrated GaN/por-Si heterostructures by plasma-assisted molecular beam epitaxy without an A1N/Si buffer layer is demonstrated. The beneficial effect of the high-temperature nitridation of a silicon substrate before GaN growth on the crystal quality of the GaN/Si layers is shown. It is established that, to obtain two-dimensional GaN layers on Si(111), it is reasonable to use compliant por-Si substrates and low-temperature GaN seed layers with a 3D morphology synthesized by plasma-assisted molecular beam epitaxy at relatively low substrate temperatures under stoichiometric conditions and upon enrichment with nitrogen. In this case, a self-assembled array of GaN seed nanocolumns with a fairly uniform diameter distribution forms on the por-Si substrate surface. The basic GaN layers, in turn, should be grown at a high temperature under stoichiometric conditions upon enrichment with gallium, upon which the coalescence of nucleated GaN nanocolumns and growth of a continuous two-dimensional GaN layer are observed. The use of compliant Si substrates is a relevant approach for forming GaN-based semiconductor device heterostructures by plasma-assisted molecular beam epitaxy.
Similar content being viewed by others
REFERENCES
I. Roland, M. Gromovyi, Y. Zeng, M. El Kurdi, S. Sauvage, C. Brimont, T. Guillet, B. Gayral, F. Semond, J. Y. Duboz, M. de Micheli, X. Checoury, and P. Boucaud, Sci. Rep. 6, 34191 (2016).
K. Nishi, K. Takemasa, M. Sugawara, and Y. Arakawa, IEEE J. Sel. Top. Quantum. Electron. 23, 1 (2017).
P. V. Seredin, D. L. Goloshchapov, A. S. Lenshin, A. M. Mizerov, and D. S. Zolotukhin, Phys. E (Amsterdam, Neth.) 104, 101 (2018).
P. V. Seredin, A. S. Lenshin, D. S. Zolotukhin, I. N. Arsentyev, A. V. Zhabotinskiy, and D. N. Nikolaev, Phys. E (Amsterdam, Neth.) 97, 218 (2018).
P. V. Seredin, A. S. Lenshin, D. S. Zolotukhin, I. N. Arsentyev, D. N. Nikolaev, and A. V. Zhabotinskiy, Phys. B: Condens. Matter 530, 30 (2018).
A. S. Lenshin, P. V. Seredin, B. L. Agapov, D. A. Minakov, and V. M. Kashkarov, Mater. Sci. Semicond. Process 30, 25 (2015).
A. S. Len’shin, V. M. Kashkarov, P. V. Seredin, B. L. Agapov, D. A. Minakov, V. N. Tsipenyuk, and E. P. Domashevskaya, Tech. Phys. 59, 224 (2014).
V. M. Kashkarov, A. S. Len’shin, P. V. Seredin, B. L. Agapov, and V. N. Tsipenuk, J. Surf. Invest.: X-ray Synchrotr. Neutron Tech. 6, 776 (2012).
R. J. Martín-Palma, L. Pascual, P. Herrero, and J. M. Martínez-Duart, Appl. Phys. Lett. 81, 25 (2002).
P. V. Seredin, A. S. Lenshin, D. L. Goloshchapov, A. N. Lukin, I. N. Arsentyev, A. D. Bondarev, and I. S. Tarasov, Semiconductors 49, 915 (2015).
P. V. Seredin, A. V. Glotov, E. P. Domashevskaya, I. N. Arsentyev, D. A. Vinokurov, A. L. Stankevich, and I. S. Tarasov, Semiconductors 44, 1106 (2010).
P. V. Seredin, A. V. Glotov, V. E. Ternovaya, E. P. Domashevskaya, I. N. Arsentyev, D. A. Vinokurov, A. L. Stankevich, and I. S. Tarasov, Semiconductors 45, 481 (2011).
P. V. Seredin, V. E. Ternovaya, A. V. Glotov, A. S. Len’shin, I. N. Arsent’ev, D. A. Vinokurov, I. S. Tarasov, H. Leiste, and T. Prutskij, Phys. Solid State 55, 2161 (2013).
S. Adachi, Properties of Semiconductor Alloys: Group IV, III–V and II–VI Semiconductors, 1st ed. (Wiley, Chichester, UK, 2009). http://doi.wiley.com/10.1002/9780470744383
I. Booker, L. Rahimzadeh Khoshroo, J. F. Woitok, V. Kaganer, C. Mauder, H. Behmenburg, J. Gruis, M. Heuken, H. Kalisch, and R. H. Jansen, Phys. Status Solidi C 7, 1787 (2010).
R. W. Olesinski, N. Kanani, and G. J. Abbaschian, Bull. Alloy Phase Diagram 6, 362 (1985).
T. Metzger, R. Höpler, E. Born, O. Ambacher, M. Stutzmann, R. Stömmer, M. Schuster, H. Göbel, S. Christiansen, M. Albrecht, and H. P. Strunk, Philos. Mag. A 77, 1013 (1998).
S. K. Hong, T. Yao, B. J. Kim, S. Y. Yoon, and T. I. Kim, Appl. Phys. Lett. 77, 82 (2000).
E. P. Domashevskaya, P. V. Seredin, A. N. Lukin, L. A. Bityutskaya, M. V. Grechkina, I. N. Arsentyev, D. A. Vinokurov, and I. S. Tarasov, Surf. Interface Anal. 38, 828 (2006).
Y. Cordier, N. Baron, S. Chenot, P. Vennéguès, O. Tottereau, M. Leroux, F. Semond, and J. Massies, J. Cryst. Growth 311, 2002 (2009).
A. Ubukata, K. Ikenaga, N. Akutsu, A. Yamaguchi, K. Matsumoto, T. Yamazaki, and T. Egawa, J. Cryst. Growth 298, 198 (2007).
S. Raghavan and J. M. Redwing, J. Appl. Phys. 98, 023514 (2005).
I. Vurgaftman and J. R. Meyer, J. Appl. Phys. 94, 3675 (2003).
ACKNOWLEDGMENTS
We acknowledge the Karlsruhe Nano Micro Facility (KNMF, www.kit.edu/knmf), Forschungszentrum Karlsruhe for providing access to the equipment at their laboratories.
Funding
This work was supported by the Grant of the President of the Russian Federation MD-42.2019.2 and Russian Federation Government Regulation no. 211, contract no. 02.A03.21.0006.
The growth experiments were carried out in the framework of the state task of the Ministry of Education and Science of the Russian Federation no. 16.9789.2017 BCh.
The diagnostics of the integrated structures was supported by the Ministry of Education and Science of the Russian Federation, project no. 11.4718.2017/8.9 in the framework of the state task to higher schools in the field of scientific activity 2017–2019.
The study of controlling the morphology and composition of bulk and porous substrates was supported by the Ioffe Institute.
Author information
Authors and Affiliations
Corresponding authors
Additional information
Translated by E. Bondareva
Rights and permissions
About this article
Cite this article
Seredin, P.V., Goloshchapov, D.L., Zolotukhin, D.S. et al. Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate. Semiconductors 53, 1120–1130 (2019). https://doi.org/10.1134/S1063782619080165
Received:
Revised:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063782619080165