Abstract
The effect of growth conditions on the structural perfection of AlInGaAsP/InP thin-film heterostructures is discussed. The key parameters determining the structural perfection and surface quality of thin AlInGaAsP epitaxial films grown on indium-phosphide substrates from the liquid phase in a temperature-gradient field are determined.
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The work was performed as part of the state assignment of the Southern Scientific Center of the Russian Academy of Sciences for 2019 (state registration number of the project no. 01201354240) and was supported by the Russian Foundation for Basic Research, project no. 17-08-01206А.
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Alfimova, D.L., Lunin, L.S., Lunina, M.L. et al. On the Properties of Isoparametric AlInGaAsP/InP Heterostructures. Semiconductors 53, 887–891 (2019). https://doi.org/10.1134/S1063782619070029
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DOI: https://doi.org/10.1134/S1063782619070029