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Structural Characteristics of Epitaxial Low-Temperature Grown {InGaAs/InAlAs} Superlattices on InP(100) and InP(111)A Substrates

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Abstract

The structural characteristics of {InGaAs/InAlAs} superlattices, grown by molecular-beam epitaxy (MBE) at a temperature of 200°C on InP substrates with the crystallographic orientations (100) and (111)A, have been investigated. The superlattices consist of 100 periods of alternating In0.53Ga0.47As and In0.52Al0.48As layers with nominal thicknesses of 12 and 8 nm, respectively. The structural quality of the samples has been investigated by transmission electron microscopy (TEM). It is shown that the superlattice on the InP(100) substrate is single-crystal with high concentration of stacking faults, twins, and small-angle domains. The superlattice on the InP(111)A substrate is polycrystalline; however, the grown layers can be traced throughout almost the entire superlattice. A wave-like curvature of the layers grown on the InP(111)A substrate is much larger than that of the layers grown on the InP(100) substrate: the angular ranges of layer deviation from the horizontal growth plane reach ±30° and ±18°, respectively.

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Funding

This study was supported by the Russian Foundation for Basic Research, project no. 18-32-20207 mol_a_ved.

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Authors and Affiliations

  1. Mokerov Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences, 117105, Moscow, Russia

    G. B. Galiev, E. A. Klimov, A. N. Klochkov & S. S. Pushkarev

  2. National Research Centre “Kurchatov Institute”, 123182, Moscow, Russia

    A. L. Vasiliev & I. N. Trunkin

  3. Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,” Russian Academy of Sciences, 119333, Moscow, Russia

    A. L. Vasiliev

  4. National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), 115409, Moscow, Russia

    I. S. Vasil’evskii & A. N. Vinichenko

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  1. G. B. Galiev
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  2. A. L. Vasiliev
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  3. I. S. Vasil’evskii
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  4. A. N. Vinichenko
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  5. E. A. Klimov
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  6. A. N. Klochkov
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  7. I. N. Trunkin
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  8. S. S. Pushkarev
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Correspondence to S. S. Pushkarev.

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Translated by Yu. Sin’kov

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Galiev, G.B., Vasiliev, A.L., Vasil’evskii, I.S. et al. Structural Characteristics of Epitaxial Low-Temperature Grown {InGaAs/InAlAs} Superlattices on InP(100) and InP(111)A Substrates. Crystallogr. Rep. 65, 496–501 (2020). https://doi.org/10.1134/S1063774520030104

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  • DOI: https://doi.org/10.1134/S1063774520030104

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