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Low-Temperature epitaxial growth of InGaAs films on InP(100) and InP(411)A substrates

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Abstract

The structural and electrical characteristics of In0.53Ga0.47As epitaxial films, grown in the low-temperature mode on InP substrates with (100) and (411)A crystallographic orientations at flow ratios of As4 molecules and In and Ga atoms of γ = 29 and 90, have been comprehensively studied. The use of InP(411)A substrates is shown to increase the probability of forming two-dimensional defects (twins, stacking faults, dislocations, and grain boundaries), thus reducing the mobility of free electrons, and AsGa point defects, which act as donors and increase the free-electron concentration. An increase in γ from 29 to 90 leads to transformation of single-crystal InGaAs films grown on (100) and (411)A substrates into polycrystalline ones.

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Authors and Affiliations

  1. Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences, Moscow, 117105, Russia

    G. B. Galiev, E. A. Klimova, S. S. Pushkarev, A. N. Klochkov & P. P. Maltsev

  2. National Research Centre “Kurchatov Institute,”, Moscow, 123182, Russia

    I. N. Trunkin & A. L. Vasiliev

Authors
  1. G. B. Galiev
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  2. E. A. Klimova
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  3. S. S. Pushkarev
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  4. A. N. Klochkov
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  5. I. N. Trunkin
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  6. A. L. Vasiliev
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  7. P. P. Maltsev
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Correspondence to G. B. Galiev.

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Original Russian Text © G.B. Galiev, E.A. Klimov, S.S. Pushkarev, A.N. Klochkov, I.N. Trunkin, A.L. Vasiliev, P.P. Maltsev, 2017, published in Kristallografiya, 2017, Vol. 62, No. 4, pp. 604–612.

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Galiev, G.B., Klimova, E.A., Pushkarev, S.S. et al. Low-Temperature epitaxial growth of InGaAs films on InP(100) and InP(411)A substrates. Crystallogr. Rep. 62, 589–596 (2017). https://doi.org/10.1134/S1063774517030063

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  • DOI: https://doi.org/10.1134/S1063774517030063

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