Abstract
For p-Bi2Te3 crystals grown by the Czochralski method, the temperature dependences of the conductivity, Hall coefficient, thermoelectric power (α), and transverse Nernst–Ettingshausen coefficient are obtained experimentally in the temperature range 77–450 K. The transmittance spectrum in the range 400–5250 cm–1 is recorded at room temperature. It is shown that, to interpret the temperature dependences of the scattering parameter r and the ratio of the thermoelectric power to temperature (α/T), it is essential to take into account the complex valence-band structure and the contribution of heavy holes to transport phenomena. Estimations of the energy band parameters in the context of the two-band model give a hole effective mass close to the free electron mass and the energy gap between nonequivalent extrema at a level of several hundredths of eV. In the absorption spectrum derived from the transmittance spectrum, a sharp increase in absorption defined by indirect interband transitions with the band gap Eg ≈ 0.14 eV is observed in the region of frequencies ν ≥ 1000 cm–1. The absorption spectrum calculated from the reflectance data using the Kramers–Kronig relations is in agreement with the experimental absorption spectrum.
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REFERENCES
B. M. Gol’tsman, V. A. Kudinov, and I. A. Smirnov, Bi 2 Te 3 -Based Semiconductor Thermoelectric Materials (Nauka, Moscow, 1972) [in Russian].
B. M. Gol’tsman, Z. M. Dashevskii, V. I. Kaidanov, and N. V. Kolomoets, Film Thermoelements: Physics and Application (Nauka, Moscow, 1985) [in Russian].
L. N. Luk’yanova, V. A. Kutasov, and P. P. Konstantinov, Phys. Solid State 47, 233 (2005).
M. K. Zhitinskaya, V. I. Kaidanov, and S. A. Nemov, Available from VINITI, No. 3628-76 (1976), p. 23.
Yu. I. Ravich, B. A. Efimova, and I. A. Smirnov, Methods for Investigating Semiconductors as Applied to Lead Halcogenides PbTe, PbSe, PbS (Moscow, Nauka, 1968) [in Russian].
S. A. Nemov, G. L. Tarantasov, V. I. Proshin, M. K. Zhitinskaya, L. D. Ivanova, and Yu. V. Granatkina, Semiconductors 43, 1585 (2009).
S. A. Nemov, N. M. Blagikh, A. Allakhkhakh, L. D. Ivanova, M. B. Dzhafarov, and A. E. Demchenko, Phys. Solid State 58, 2290 (2016).
S. A. Nemov, Yu. V. Ulashkevich, A. V. Povolotskii, and I. I. Khlamov, Semiconductors 50, 1322 (2016).
S. A. Nemov, Yu. V. Ulashkevich, and A. A. Allahkhah, Semiconductors 51, 1295 (2017).
A. N. Veis, Thermoelectrics and their Applications (FTI im. A. I. Ioffe, St. Petersburg, 2006) [in Russian].
V. V. Sobolev et al., Phys. Status Solidi B 30, 349 (1968).
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Translated by E. Smorgonskaya
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Nemov, S.A., Ulashkevich, Y.V., Rulimov, A.A. et al. On the Band Structure of Bi2Te3. Semiconductors 53, 603–606 (2019). https://doi.org/10.1134/S106378261905018X
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DOI: https://doi.org/10.1134/S106378261905018X