Skip to main content
Log in

Band Structure and Processes in the Electronic System of (Bi2 – xSbx)Te3 (0 < x < 2) Crystals, According to Optical Studies in the Infrared Range

  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

A decrease in the resonance frequency of plasma oscillations of free carriers ωp, observed in p-type Bi2 – xSbx (0 < x < 2) crystals with increasing temperature, can only partially be explained by an increase in the crystal-polarization background ε. An analysis of experimental data suggests that the temperature change in ωp observed in the range from 80 to 300 K is also due to a decrease in the ratio of the concentration of free carriers to their effective mass p/m*. This can be explained by an increase in the carrier effective mass with increasing temperature, as well as by the process of hole redistribution between nonequivalent valence-band extrema, whose existence is confirmed by the regularities of temperature changes in the width of the optical band gap, observed in the infrared reflection spectra.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Fig. 1.
Fig. 2.
Fig. 3.
Fig. 4.
Fig. 5.

Similar content being viewed by others

REFERENCES

  1. B. M. Gol’tsman, V. A. Kudinov, and I. A. Smirnov, Thermoelectric Semiconductor Materials Based on Bi2Te3 (Nauka, Moscow, 1972) [in Russian].

    Google Scholar 

  2. L. D. Ivanova and Yu. V. Granatkina, Inorg. Mater. 36, 672 (2000).

    Article  Google Scholar 

  3. S. A. Nemov, N. M. Blagikh, and L. D. Ivanova, Phys. Solid State 56, 1754 (2014).

    Article  ADS  Google Scholar 

  4. N. P. Stepanov, V. Yu. Nalivkin, and V. A. Komarov, Izv. RGPU Gertsena 157, 74 (2013).

    Google Scholar 

  5. V. A. Kul’bachinskii, A. Yu. Kaminskii, and V. G. Kytin, J. Exp. Theor. Phys. 90, 1081 (2000).

    Article  ADS  Google Scholar 

  6. N. P. Stepanov and A. A. Kalashnikov, Opt. Spectrosc. 129 (2021, in press).

  7. L. R. Testardi, J. N. Bierly, and F. J. Danahoe, J. Phys. Chem. Sol. 23, 1209 (1962).

    Article  ADS  Google Scholar 

  8. C. H. Champness and A. L. Kipling, J. Phys. Chem. Sol. 27, 1409 (1966).

    Article  ADS  Google Scholar 

  9. V. A. Kutasov, B. Ya. Moizhes, and I. A. Smirnov, Sov. Phys. Solid State 7, 854 (1965).

    Google Scholar 

  10. J. H. Dennis, PhD Thesis (Massachusetts Inst. Technol., Cambridge, MA, 1961).

  11. V. A. Kulbachinskii, V. G. Kytin, P. M. Tarasov, and N. A. Yuzeeva, Phys. Solid State 52, 1830 (2010).

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to N. P. Stepanov.

Ethics declarations

The authors declare that they have no conflict of interest.

Additional information

Translated by A. Kazantsev

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Stepanov, N.P., Kalashnikov, A.A. & Uryupin, O.N. Band Structure and Processes in the Electronic System of (Bi2 – xSbx)Te3 (0 < x < 2) Crystals, According to Optical Studies in the Infrared Range. Semiconductors 55, 637–641 (2021). https://doi.org/10.1134/S1063782621070186

Download citation

  • Received:

  • Revised:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063782621070186

Keywords:

Navigation