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Resistance of 4H-SiC Schottky barriers at high forward-current densities

  • Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
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Abstract

The resistance of Schottky barriers based on 4H-SiC is experimentally determined at high forward-current densities. The measured resistance is found to be significantly higher than the resistance predicted by classical mechanisms of electron transport in Schottky contacts. An assumption concerning the crucial contribution of the tunnel-transparent intermediate oxide layer between the metal and semiconductor to the barrier resistance is proposed and partially justified.

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Authors and Affiliations

  1. Ioffe Physical–Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, St. Petersburg, 194021, Russia

    P. A. Ivanov, T. P. Samsonova, N. D. Il’inskaya, O. Yu. Serebrennikova, O. I. Kon’kov & A. S. Potapov

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  1. P. A. Ivanov
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  2. T. P. Samsonova
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  3. N. D. Il’inskaya
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  4. O. Yu. Serebrennikova
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  5. O. I. Kon’kov
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  6. A. S. Potapov
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Corresponding author

Correspondence to P. A. Ivanov.

Additional information

Original Russian Text © P.A. Ivanov, T.P. Samsonova, N.D. Il’inskaya, O.Yu. Serebrennikova, O.I. Kon’kov, A.S. Potapov, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 7, pp. 951–955.

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Ivanov, P.A., Samsonova, T.P., Il’inskaya, N.D. et al. Resistance of 4H-SiC Schottky barriers at high forward-current densities. Semiconductors 49, 930–934 (2015). https://doi.org/10.1134/S1063782615070106

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  • DOI: https://doi.org/10.1134/S1063782615070106

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