Detailed Analysis of Device Parameters by Means of Different Techniques in Schottky Devices

Abstract

In the present work, the detailed device parameters of Au/n-Si (100)/Al Schottky devices are calculated by means of the conductance–voltage–frequency (G–V–f), capacitance–voltage–frequency (C–V–f) and current–voltage (I–V) measurements at 300 K. The structure of the device shows a good rectifying behavior. The barrier height $\left( {\Phi_{\rm{B}} } \right)$ value of 0.822 eV from the C–V is determined to be higher than the 0.774 eV from the I–V. The barrier height $\left( {\Phi_{\rm{B}} } \right)$ and series resistance $\left( {R_{\rm{s}} } \right)$ values of the sample determined from the Cheung and Cheung technique are 0.755 eV and 220.5 Ω, respectively. The values of the carrier donor concentration ($N_{\rm{D}}$), the level of Fermi ($E_{\rm{F}}$), the lowering of image force ($\Delta \Phi_{\rm{b}}$), the space charge layer width ($W_{\rm{D}}$) and the maximum electric field ($E_{\rm{max}}$) are determined as 1.305 × 10¹⁵ cm⁻³, 0.258 eV, 0.0136 eV, 7.6 × 10⁻⁵ cm and 1.52 × 10⁴ V/cm, respectively. The density of the interface state $(N_{\rm{ss}})$ determined from the I–V characteristic ranges from 8.80 × 10¹² eV⁻¹ cm⁻² to 5.44 × 10¹¹ eV⁻¹ cm⁻².