Abstract
It is experimentally demonstrated that the heterogeneity of the metal-semiconductor interface degrades the characteristics of Schottky diodes, in particular, their barrier height.
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Original Russian Text © E.A. Kerimov, 2015, published in Mikroelektronika, 2015, Vol. 44, No. 4, pp. 278–281.
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Kerimov, E.A. Electrical properties of contacts with the IrSi-Si-based Schottky barrier. Russ Microelectron 44, 244–247 (2015). https://doi.org/10.1134/S106373971503004X
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DOI: https://doi.org/10.1134/S106373971503004X