Abstract
One layer of self-assembled InMnAs quantum dots with InGaAs barrier was grown on high-resistivity (100) p-type GaAs substrates by molecular beam epitaxy (MBE). A presence of ferromagnetic structure was confirmed in the InMnAs dilute magnetic quantum dots. The one layer of self-assembled InMnAs quantum dots was found to be semiconducting, and have ferromagnetic ordering with a Curie temperature, T C =80 K. It is likely that the ferromagnetic exchange coupling of sample with T C =80 K is hole-mediated resulting in Mn substituting Ge. PL emission spectra of InMnAs samples grown at temperature of 210°C and 285°C show that the interband transition peak centered at 1.31 eV comes from the InMnAs quantum dot.
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Yoon, I.T., Lee, S., Shon, Y. et al. Ferromagnetism in One Layer of Self-organized InMnAs Quantum Dots. J Supercond Nov Magn 24, 1393–1396 (2011). https://doi.org/10.1007/s10948-010-0840-7
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DOI: https://doi.org/10.1007/s10948-010-0840-7