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Formation of Precipitates in Si Implanted with 64Zn+ and 16O+ Ions

  • Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)
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Abstract

The results of studying the surface Si layer and precipitate formation in CZ n-Si(100) samples sequentially implanted with 64Zn+ ions with a dose of 5 × 1016 cm2 and energy of 100 keV and 16O+ ions with the same dose but an energy of 33 keV at room temperature so that their projection paths Rp = 70 nm would coincide are presented. The post-implantation samples are annealed for 1 h in an inert Ar medium in the temperature range of 400–900°C with a step of 100°C. The profiles of the implanted impurities are studied by time-of-flight secondary ion mass spectrometry. The Si surface is visualized using a scanning electron microscope, while the near-surface layer is visualized with the help of maps of elements formed by Auger electron spectroscopy with profiling over depth. The ZnO(002) texture is formed in an amorphized Si layer after the implantation of Zn and O ions. ZnO(102) crystallites of 5 nm in size are found in a recrystallized single-crystalline Si layer after annealing in Ar at 700°C.

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Authors and Affiliations

  1. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, 117218, Russia

    V. V. Privezentsev

  2. National Research University of Electronic Technology, Zelenograd, Moscow, 124498, Russia

    E. P. Kirilenko & A. V. Goryachev

  3. AO Research and Production Enterprise “Pulsar”, Moscow, 105187, Russia

    A. V. Lutzau

Authors
  1. V. V. Privezentsev
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  2. E. P. Kirilenko
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  3. A. V. Goryachev
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  4. A. V. Lutzau
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Correspondence to V. V. Privezentsev.

Additional information

Original Russian Text © V.V. Privezentsev, E.P. Kirilenko, A.V. Goryachev, A.V. Lutzau, 2018, published in Fizika i Tekhnika Poluprovodnikov, 2018, Vol. 52, No. 8, pp. 827–835.

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Privezentsev, V.V., Kirilenko, E.P., Goryachev, A.V. et al. Formation of Precipitates in Si Implanted with 64Zn+ and 16O+ Ions. Semiconductors 52, 961–968 (2018). https://doi.org/10.1134/S106378261808016X

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  • DOI: https://doi.org/10.1134/S106378261808016X

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