Abstract
Several experimental methods for controlling the quality of the multilayer film structures used for the fabrication of magnetic tunneling junctions (MTJs) are considered. A multilayer magnetoresistive structure of the following composition is deposited using magnetron sputtering on a Singulus Timaris cluster tool: Ta/CuN/Ta/NiFe/IrMn/CoFe/Ru/CoFeB/MgO/CoFeB/Ta/Ru. A layer-by-layer elemental analysis of the composition of the deposited structure is carried out by the time of flight (TOF) secondary ion mass-spectrometry on a TOF.SIMS 5 installation. A cross section of the structure is analyzed using transmission electron microscopy (TEM) (Tecnai G2 F20 U-TWIN). The crystal structure of the layers is characterized using X-ray diffraction. A comparison of the data obtained using different analytical methods lets us estimate the accuracy of the analysis and the quality of the structure intended for further MTJ fabrication.
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ACKNOWLEDGMENTS
The work was carried out under a state assignment of the Federal Agency of Scientific Organizations (FASO) of Russia on the equipment of the center for the collective use of the scientific equipment “Diagnostics of micro- and nanostructures” [5].
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Trushin, O.S., Simakin, S.G., Vasiliev, S.V. et al. Quality Control of a Multilayer Spin-Tunnel Structure with the Use of a Combination of Analytical Methods. Russ Microelectron 47, 381–387 (2018). https://doi.org/10.1134/S1063739718060094
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DOI: https://doi.org/10.1134/S1063739718060094