Abstract
X-ray diffraction (XRD) techniques are powerful, non-destructive characterization tool with minimal sample preparation. XRD provides the first information about the materials phases, crystalline structure, average crystallite size, micro and macro strain, orientation parameter, texture coefficient, degree of crystallinity, crystal defects etc. XRD analysis provides information about the bulk, polycrystalline thin films, and multilayer structures, which is very important in various scientific and material engineering fields. This review discusses the diffraction related phenomena/principles such as powder X-ray diffraction, and thin-film/grazing incidence X-ray diffraction (GIXRD) comprehensively for thin film samples which are used frequently in various branches of science and technology. The review also covers few case studies on polycrystalline thin-film samples related to phase analysis, preferred orientation parameter (texture coefficient) analysis, stress evaluation in thin films and multilayer, multiphase content identification, bifurcation of multiphase on multilayer samples, depth profiling in thin-film/ multilayer structures, the impact of doping effect on structural properties of thin films etc., comprehensively using GIXRD/XRD.
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References
M. Ohring, The Materials Science of Thin Film, 2nd edn. (Academic Press, Boston, 1992).
S.C. Tjong, H. Chen, Nanocrystalline materials and coatings. Mater. Sci. Eng. R 45, 1–88 (2004). https://doi.org/10.1016/j.mser.2004.07.001
P. Muralt, Ferroelectric thin films for micro-sensors and actuators: a review. J. Micromech. Microeng. 10, 136–146 (2000). https://doi.org/10.1088/0960-1317/10/2/307
S.M. Sze, Semiconductor Devices: Physics and Technology, 2nd edn. (Wiley India Pvt, Chichester, 2008).
F.A. Vittoria, M. Endrizzi, P.C. Diemoz, A. Zamir, U.H. Wagner, C. Rau, I.K. Robinson, A. Olivo, X-ray absorption, phase and dark-field tomography through a beam tracking approach. Sci. Rep. 5, 16318 (2015). https://doi.org/10.1038/srep16318
A. Gibaud, S. Hazra, X-ray reflectivity and diffuse scattering. Curr. Sci. 78(12), 1467–1477 (2000)
B.D. Cullity, S.R. Stock, Elements of X-Ray Diffraction, 3rd edn. (Prentice-Hall, Englewood Cliffs, 2001).
C. Suryanarayana, X-Ray Diffraction: A Practical Approach (Springer, M. Grant Norton, 1998).
L.V. Azaroff, Elements of X-Ray Crystallography (McGraw-Hill, New York, 1968).
C. Kittel, Introduction to Solid State Physics, 5th edn. (Wiley, Chichester, 1976).
C. Giannini, M. Ladisa, D. Altamura, D. Siliqi, T. Sibillano, L. De Caro, X-ray diffraction: a powerful technique for the multiple-length-scale structural analysis of nanomaterials. Crystals 10, 1–22 (2016). https://doi.org/10.3390/cryst6080087
C.J. Benmore, A review of high-energy X-ray diffraction from glasses and liquids. Intl. Sch. Res. Notices (2012). https://doi.org/10.5402/2012/852905
A.A. Bunaciu, E. GabrielaUdriştioiu, H.Y. Aboul-Enein, X-ray diffraction: instrumentation and applications. Crit. Rev. Anal. Chem. 45, 289–299 (2015). https://doi.org/10.1080/10408347.2014.949616
M.A. Moram, M.E. Vickers, X-ray diffraction of III-nitrides. Rep. Prog. Phys. 72, 036502 (2009)
E.S. Ameh, A review of basic crystallography and X-ray diffraction applications. Int. J. Adv. Manuf. Technol. 105, 3289–3302 (2019). https://doi.org/10.1007/s00170-019-04508-1
R Novelize, Squire's Fundamentals of Radiology. Harvard University Press. 5th edition. ISBN 0-674-83339-2, p. 1 (1997).
W. Friedrich, P. Knipping, M. von Laue, Interferenz-Erscheinungen bei R€ ontgenstrahlen. Sitzungsber. Math.-Phys. Classe K€oniglich Bayerischen Akad. Wiss. M€unchen. 303–322 (1912).
M. Eckert, Ann. Phys. (Berlin), 524 (5), A83–A85 (2012) https://doi.org/10.1002/andp.201200724.
W.H. Bragg, W.L. Bragg, The reflexion of X-rays by crystals. Proc. R. Soc. Lond. A. 88(605), 428–438 (1913)
D.K. Bowen, B.K. Tanner, High-Resolution X-Ray Diffractometry and Topography (CRC Press, Boca Raton, 2005).
G. Bauer, Optical Characterization of Epitaxial Semiconductor Layers (Springer, Berlin, 1996).
P. F. Fewster, X-Ray Scattering from Semiconductors, Second Edition Imperial College Press, (2003).
D. Taupin, Bull. Soc. Fr. Mineral. Cristallogr. 87, 469 (1964)
S. Takagi, J. Phys. Soc. Jpn. 26, 1239 (1969)
PANalytical X-Pert Pro -MRD HRXRD manual
M. Birkholz, Thin films analysis by X-Ray scattering, Wiley-VCH GmbH & Co. 2006.
H.M. Rietveld, Line profiles of neutron powder diffraction peaks for structure refinement. Acta Crystallogr. 22, 151 (1967). https://doi.org/10.1107/S0365110X67000234
H.M. Rietveld, A profile refinement method for nuclear and magnetic structure. J. Appl. Cryst. 2, 65–71 (1969). https://doi.org/10.1107/S0021889869006558
X. Orlhac, C. Fillet, P. Deniard, A.M. Dulac, R. Brec, Determination of the crystallized fractions of a largely amorphous multiphase material by the Rietveld method. J. Appl. Cryst. 34, 114–118 (2001). https://doi.org/10.1107/S0021889800017908
S.M. Ohlberg, D.W. Strickler, Determination of percent crystallinity of partly devitrified glass by X-ray diffraction. J. Am. Ceram. Soc. 45, 170–171 (1962). https://doi.org/10.1111/j.1151-2916.1962.tb11114.x
A.S. Goikhman, V.M. Irklei, O.S. Vavrinyuk, V.I. Pirogov, X-ray diffraction determination of the degree of crystallinity of cellulose using a computer. Fibre Chem. 24, 80–85 (1992). https://doi.org/10.1007/BF00557189
W.L. Bond, Precision lattice constant determination. Acta Cryst. 13, 814 (1960). https://doi.org/10.1107/S0365110X60001941
P.F. Fewster, Absolute lattice parameter measurement. J. Mater. Sci.: Mater. Electron. 10, 175–183 (1999). https://doi.org/10.1023/A:1008935709977
M. Fatemi, Absolute measurement of lattice parameter in single crystals and epitaxic layers on a double-crystal X-ray diffractometer. Acta Crystallogr. A 61, 301–313 (2005). https://doi.org/10.1107/S0108767305004496
P. Scherrer, Göttinger Nachrichten Gesell. 2, 98 (1918)
J.I. Langford, A.J.C. Wilson, Seherrer after sixty years: a survey and some new results in the determination of crystallite size. J. Appl. Cryst. 11, 102–113 (1978). https://doi.org/10.1107/S0021889878012844
G.K. Williamson, W.H. Hall, X-ray line broadening from filed aluminium and wolfram. Acta Metall. 1, 22–31 (1953). https://doi.org/10.1016/0001-6160(53)90006-6
B.E. Warren, B.L. Averbach, J. Appl. Phys. 21, 595 (1950). https://doi.org/10.1063/1.1699713
V. Mote, Y. Purushotham, B. Dole, Williamson-Hall analysis in estimation of lattice strain in nanometer-sized ZnO particles. J. Theor. Appl. Phys. 6, 6 (2012). https://doi.org/10.1186/2251-7235-6-6
A. K. Singh (ed.), Advanced X-ray Techniques in Research and Industries, Ios Pr Inc, (2005). ISBN 1586035371.
P.J. Withers, H.K.D.H. Bhadeshia, Residual stress. Part 1: measurement techniques. Mater. Sci. Technol. 17, 355–365 (2001). https://doi.org/10.1179/026708301101509980
G.B. Harris, Quantitative measurement of preferred orientation in rolled uranium bars. Phil. Mag. Series 43, 336 (1952). https://doi.org/10.1080/14786440108520972
M. Kumar, A. Kumar, A.C. Abhyankar, Influence of texture coefficient on surface morphology and sensing properties of W-doped nanocrystalline tin oxide thin films. ACS Appl. Mater. Interfaces. 7, 3571–3580 (2015). https://doi.org/10.1021/am507397z
Y. Wang, W. Tang, L. Zhang, Crystalline size effects on texture coefficient, electrical and optical properties of sputter-deposited Ga-doped ZnO thin films. J. Mater. Sci. Technol. 31(2), 175–181 (2015). https://doi.org/10.1016/j.jmst.2014.11.009
I. C. Noyan, J. B. Cohen, Residual Stress, Measurement by Diffraction and Interpretation (Springer-Verlag, New York, 1987). https://doi.org/10.1007/978-1-4613-9570-6
S. K. Gupta, M.G. Gartley, International Centre for Diffraction Data (ICDD), the Denver X-ray Conference (DXC) 52 (1999).
J.N. Reddy, Mechanics of Laminated Composite Plates (CRC Press, Boca Raton, 1997).
Q. Luo, A.H. Jones, High-precision determination of residual stress of polycrystalline coatings using optimised XRD-sin2ψ technique. Surf. Coat. Tech. 205, 1403–1408 (2010). https://doi.org/10.1016/j.surfcoat.2010.07.108
C.H. Ma, J.H. Huang, H. Chen, Residual stress measurement in textured thin film by grazing-incidence X-ray diffraction. Thin Solid Films 418, 73–78 (2002). https://doi.org/10.1016/S0040-6090(02)00680-6
Y. Xi, K. Gao, X. Pang, H. Yang, X. Xiong, H. Li, A.A. Volinsky, Film thickness effect on texture and residual stress sign transition in sputtered TiN thin films. Ceram. Int. 43, 11992–11997 (2017). https://doi.org/10.1016/j.ceramint.2017.06.050
M.K. Ozturk, E. Arslan, I. Kars, S. Ozcelik, E. Ozbay, Strain analysis of the GaN epitaxial layers grown on nitridated Si (111) substrate by metal organic chemical vapor deposition. Mater. Sci. Semicond. Process 16, 83–88 (2013). https://doi.org/10.1016/j.mssp.2012.06.013
S. Chowdhury, D. Biswas, Impact of varying buffer thickness generated strain and threading dislocations on the formation of plasma assisted MBE grown ultra-thin AlGaN/GaN heterostructure on silicon. AIP Adv. 5, 057149 (2015). https://doi.org/10.1063/1.4921757
A. Pandey, R. Raman, S. Dalal, D. Kaur, A.K. Kapoor, Structural and optical characteristics investigations in oxygen ion implanted GaN epitaxial layers. Mater. Sci. Semicond. Process. 107, 104833 (2020). https://doi.org/10.1016/j.mssp.2019.104833
W.C. Marra, P. Eisenberger, A.Y. Cho, X-ray total-external-reflection–Bragg diffraction: a structural study of the GaAs-Al interface. J. Appl. Phys. 50, 6927 (1979). https://doi.org/10.1063/1.325845
P. Colombi, P. Zanola, E. Bontempi, R. Roberti, Glancing-incidence X-ray diffraction for depth profiling of polycrystalline layers. J. Appl. Crystall. 10, 176–179 (2006). https://doi.org/10.1107/S0021889805042779
P. Colombi, P. Zanola, E. Bontempi, L.E. Depero, Modeling of glancing incidence X-ray for depth profiling of thin layers. Spectrochim. Acta Part B 62, 554–557 (2007). https://doi.org/10.1016/j.sab.2007.02.012
C.A.Ã. Kaufmann, R. Caballero, T. Unold, R. Hesse, R. Klenk, S. Schorr, M. Nichterwitz, H. Schock, Depth profiling of Cu (In, Ga)Se2 thin films grown at low temperatures. Solar Energy Mater Solar Cell 93, 859–863 (2009). https://doi.org/10.1016/j.solmat.2008.10.009
X. Jin, Neutron Diffraction Principles, Instrumentation and Application (Nova Science Publishers, Inc., New York, 2013).
D.B. Williams, C.B. Carter, Transmission Electron Microscopy: A Textbook for Materials Science (Springer, New York, 1996).
X. Cong, X.L. Liu, M.L. Lin, P.H. Tan, Application of Raman spectroscopy to probe fundamental properties of two-dimensional materials. NPJ 2D Mater. Appl. 4, 1–12 (2020). https://doi.org/10.1038/s41699-020-0140-4
B. Mednikarov, G. Spasov, T. Babeva, Aluminum nitride layers prepared by DC/RF magnetron sputtering. J. Optoelectron. Adv. Mater. 7, 1421–1427 (2005)
D. De-Faoite, D.J. Browne, F.R. Chang-Dıaz, K.T. Stanton, A review of the processing, composition, and temperature-dependent mechanical and thermal properties of dielectric technical ceramics. J. Mater. Sci. 47, 4211–4235 (2012). https://doi.org/10.1007/s10853-011-6140-1
C. Caliendo, P. Imperaton, E. Cianci, Structural, morphological and acoustic properties of AlN thick films sputtered on Si(001) and Si(111) substrates at low temperature. Thin Solid Films 441, 32–37 (2003). https://doi.org/10.1016/S0040-6090(03)00911-8
K. Tonisch, V. Cimalla, C. Foerster, H. Romanus, O. Ambacher, D. Dontsov, Piezoelectric properties of polycrystalline AlN thin films for MEMS application. Sens. Actuators A 132, 658–663 (2006). https://doi.org/10.1016/j.sna.2006.03.001
A. Ababneh, M. Alsumady, H. Seidel, T. Manzaneque, J. Hernando-García, J.L. Sanchez-Rojas, A. Bittner, U. Schmid, c-axis orientation and piezoelectric coefficients of AlN thin films sputter-deposited on titanium bottom electrodes. Appl. Surf. Sci. 259, 59–65 (2012). https://doi.org/10.1016/j.apsusc.2012.06.086
A. Pandey, R. Prakash, S. Dutta, S. Dalal, A. Kumar, A.K. Kapoor, D. Kaur, Growth and morphological evolution of c-axis oriented AlN films on Si (100) substrates by DC sputtering technique. AIP Conf. Proc. 1953, 1–5 (2018). https://doi.org/10.1063/1.5032964
A. Pandey, S. Dutta, R. Prakash, S. Dalal, R. Raman, A.K. Kapoor, D. Kaur, Growth and evolution of residual stress of AlN films on silicon (100) wafer. Mater. Sci. Semicond. Process. 52, 16–23 (2016). https://doi.org/10.1016/j.mssp.2016.05.004
N. Gupta, A. Pandey, S.R.K. Vanjari, S. Dutta, Influence of residual stress on performance of AlN thin film based piezoelectric MEMS accelerometer structure. Microsyst. Technol. 25, 3959–3967 (2019). https://doi.org/10.1007/s00542-019-04334-1
D. Holec, P.H. Mayrhofer, Surface energies of AlN allotropes from first principles. Scripta Mater. 67, 760–762 (2012). https://doi.org/10.1016/j.scriptamat.2012.07.027
J.X. Zhang, H. Cheng, Y.Z. Chen, A. Uddin, S. Yuan, S.J. Geng, S. Zhang, Growth of AlN films on Si (100) and Si (111) substrates by reactive magnetron sputtering. Surf. Coat. Technol. 198, 68–73 (2005). https://doi.org/10.1016/j.surfcoat.2004.10.075
R. Ruh, A. Zangvil, J. Barlowe, Elastic properties of SiC, AIN, and their solid solutions and particulate composites. Am. Ceram. Soc. Bull. 64, 1368–1373 (1985)
K. Kim, W.R.L. Lambrecht, B. Segall, Elastic constants and related properties of tetrahedrally bonded BN, AlN, GaN, and InN. Phys. Rev. B 53, 16310 (1996). https://doi.org/10.1103/PhysRevB.53.16310
S. Yu, R. Chen, G. Zhang, J. Cheng, Z. Meng, Ferroelectric enhancement in heterostructured ZnO/BiFeO3-PbTiO3 film. Appl. Phys. Lett. 89, 3–6 (2006). https://doi.org/10.1063/1.2393004.1
S. Dutta, A. Pandey, I. Yadav, O.P. Thakur, R. Laishram, R. Pal, R. Chatterjee, Improved electrical properties of PbZrTiO3/BiFeO3 multilayers with ZnO buffer layer. J. Appl. Phys. 112, 084101 (2012). https://doi.org/10.1063/1.4759123
S. Dutta, A. Pandey, O.P. Thakur, R. Pal, R. Chatterjee, Estimation of residual stress in Pb(Zr0.52Ti0.48)O3/BiFeO3 multilayers deposited on silicon. J. Appl. Phys. 114, 174103 (2013). https://doi.org/10.1063/1.4828874
G.G. Stoney, The tension of metallic films deposited by electrolysis. Proc. R. Soc. Lond. A82, 172 (1909). https://doi.org/10.1098/rspa.1909.0021
S. Dutta, A. Pandey, I. Yadav, O.P. Thakur, A. Kumar, R. Pal, R. Chatterjee, Growth and electrical properties of spin coated ultrathin ZrO2 films on silicon. J. Appl. Phys. 114, 014105 (2013). https://doi.org/10.1063/1.4812733
M.J. Madau, Fundamental of Microfabrication-The Science of Miniaturization (CRC Press, Boca Raton, 2002).
A. Pandey, S. Dutta, R. Prakash, R. Raman, A.K. Kapoor, D. Kaur, Growth and comparison of residual stress of AlN films on silicon (100), (110) and (111) substrates. J. Electron. Mater. 47, 1405–1413 (2018). https://doi.org/10.1007/s11664-017-5924-8
A. Pandey, J. Kaushik, S. Dutta, A.K. Kapoor, D. Kaur, Electrical and structural characteristics of sputtered c-oriented AlN thin films on Si (100) and Si (110) substrates. Thin Solid Films 666, 143–149 (2018). https://doi.org/10.1016/j.tsf.2018.09.016
A. Pandey, B.S. Yadav, D.V.S. Rao, D. Kaur, A.K. Kapoor, Dislocation density investigation on MOCVD-grown GaN epitaxial layers using wet and dry defect selective etching. Appl. Phys. A 122, 614 (2016). https://doi.org/10.1007/s00339-016-0143-3
G.N. Sharma, S. Dutta, A. Pandey, S.K. Singh, R. Chatterjee, Influence of nickel doping on structural, morphological and mechanical properties of BiFeO3 thin films. Mater. Chem. Phys. 216, 47–50 (2018). https://doi.org/10.1016/j.matchemphys.2018.05.073
G.N. Sharma, S. Dutta, A. Pandey, S.K. Singh, R. Chatterjee, Microstructure and improved electrical properties of Ti-substituted BiFeO3 thin films. Mater. Res. Bull. 95, 223–228 (2017). https://doi.org/10.1016/j.materresbull.2017.07.046
G. Catalan, J.F. Scott, Physics and applications of bismuth ferrite. Adv. Mater. 21, 2463–2485 (2009). https://doi.org/10.1002/adma.200802849
N.A. Spaldin, S.W. Cheong, R. Ramesh, Multiferroics: past, present, and future. Phys. Today 63, 38 (2010). https://doi.org/10.1557/mrs.2017.86
K. Kaviyarasu, E. Manikandan, J. Kennedy, M. Jayachandran, R. Ladchumananandasiivam, U.U. De-Gomes, M. Maaza, Synthesis and characterization studies of NiO nano-rods for enhancing solar cell efficiency using photon up conversion materials. Ceram. Int. 42, 8385–8394 (2016). https://doi.org/10.1016/j.ceramint.2016.02.054
S. Debnath, P. Predecki, R. Suryanarayanan, Use of glancing angle X-ray powder diffractometry to depth-profile phase transformations during dissolution of in-domethacin and theophylline tablets. Pharm. Res. 21(1), 149–159 (2004). https://doi.org/10.1023/B:PHAM.0000012163.89163.f8
M. Nauer, K. Ernst, W. Kautek, M. Neumann-Spallart, Depth profile characterization of electrodeposited multi-thin-film structures by low angle of incidence X-ray diffractometry. Thin Solid Films 489, 86–93 (2005). https://doi.org/10.1016/j.tsf.2005.05.008
M. Bouroushian, T. Kosanovic, Characterization of thin films by low incidence X-ray diffraction. Cryst. Struct. Theory Appl. 01, 35–39 (2012). https://doi.org/10.4236/csta.2012.13007
C. Kumari, A. Pandey, A. Dixit, Zn interstitial defects and their contribution as efficient light blue emitters in Zn rich ZnO thin films. J. Alloy Compd. 735, 2318–2323 (2018). https://doi.org/10.1016/j.jallcom.2017.11.377
M. Agrawal, A. Jain, D.V. SridharaRao, A. Pandey, A. Goyal, A. Kumar, S. Lamba, B.R. Mehta, K. Muraleedharan, R. Muralidharan, Nanoharvesting of GaN nanowires on Si (211) substrates by plasma-assisted molecular beam epitaxy. J. Cryst. Growth. 402, 37–41 (2014). https://doi.org/10.1016/j.jcrysgro.2014.05.004
S.K. Jangir, H.K. Malik, S. Dalal, A. Pandey, T. Srinivasan, K. Muraleedharan, R. Muralidharan, P. Mishra, X-ray pole figure analysis of catalyst free InAs nanowires on Si substrate. Mater. Sci. Eng. B 225, 108–114 (2017). https://doi.org/10.1016/j.mseb.2017.08.017
J. IlHong, J. Bae, Z.L. Wang, R.L. Snyder, Room-temperature, texture-controlled growth of ZnO thin films and their application for growing aligned ZnO nanowire arrays. Nanotechnology. 20, 085609 (2009). https://doi.org/10.1088/0957-4484/20/8/085609
S.K. Jain, R.R. Kumar, N. Aggarwal, P. Vashishtha, L. Goswami, S. Kuriakose, A. Pandey, M. Bhaskaran, S. Walia, G. Gupta, Current transport and band alignment study of MoS2/GaN and MoS2/AlGaN heterointerfaces for broadband photodetection application. ACS Appl. Electron. Mater. 2, 710–718 (2020). https://doi.org/10.1021/acsaelm.9b00793
A. Pandey, S. Dutta, A. Kumar, R. Raman, A.K. Kapoor, R. Muralidhran, Structural and optical properties of bulk MoS2 for 2D layer growth. Adv. Mater. Lett. 7, 777–782 (2016). https://doi.org/10.5185/amlett.2016.6364
Y. Huang, G. Pandraud, P.M. Sarro, Characterization of low temperature deposited atomic layer deposition TiO2 for MEMS applications. J. Vac. Sci. Technol. A. 31, 01A148 (2013). https://doi.org/10.1116/1.4772664
B. Wang, J. Yan, H. Cui, S. Du, Preparation and characterization of nano TiO2/micron Cr2O3 composite particles, J. Alloys Compd. 509, 5017–5019 (2011). https://doi.org/10.1016/j.jallcom.2011.02.008
T. Jantson, T. Avarmaa, H. Mandar, T. Uustare, R. Jaaniso, Nanocrystalline Cr2O3–TiO2 thin films by pulsed laser deposition. Sens. Actuators B 109, 24–31 (2005). https://doi.org/10.1016/j.snb.2005.03.014
S. Dutta, A. Pandey, Leeladhar, K.K. Jain, Growth and characterization of ultrathin TiO2–Cr2O3 nano-composite films. J. Alloy Compd. 696, 376–381 (2017). https://doi.org/10.1016/j.jallcom.2016.11.284
B. Mehdikhani, G.H. Borhani, S.R. Bakhshi, H.R. Baharvandi, Synthesis of tantalum carbide/boride nanocomposite powders by mechanochemical method. Int. J. Eng. Trans. B Appl. 27, 769–774 (2014). https://doi.org/10.5829/idosi.ije.2014.27.05b.13
N. Khemiri, D. Abdelkader, B. Khalfallah, M. Kanzari, Synthesis and characterization of CuIn2n+1S3n+2 (with n = 0, 1, 2, 3 and 5) powders. J. Synth. Theory Appl. 02, 33–37 (2013). https://doi.org/10.4236/ojsta.2013.21003
J. Wieben, C. Beckmann, H. Yacoub, A. Vescan, H. Kalisch, Development of a III-nitride electro-optical modulator for UV–Vis. Jpn. J. Appl. Phys. 58, 7–12 (2019). https://doi.org/10.7567/1347-4065/ab079e
J. Shan, S.L. Dexheimer, Time-resolved terahertz studies of conductivity processes in novel electronic materials. Terahertz Spectrosc. Princ. Appl. (2017). https://doi.org/10.1201/9781420007701
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The authors acknowledge Dr. Seema Vinayak, Director, SSPL, for her continuous support and for the permission to publish this review article. Help from other colleagues of SSPL are also acknowledged.
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Pandey, A., Dalal, S., Dutta, S. et al. Structural characterization of polycrystalline thin films by X-ray diffraction techniques. J Mater Sci: Mater Electron 32, 1341–1368 (2021). https://doi.org/10.1007/s10854-020-04998-w
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DOI: https://doi.org/10.1007/s10854-020-04998-w