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Dispersion of the relaxation time of quasi-two-dimensional electrons under conditions of ionized-impurity scattering in a superlattice with doped quantum wells

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Abstract

Ionized-impurity scattering of quasi-two-dimensional electrons in GaAs/Al0.36Ga0.64As superlattices (SLs) with doped quantum wells is considered. The scattering probability is calculated assuming that the electron wave function is represented by the ground-state eigenfunction of the lowest SL miniband. Analytical expressions describing dispersion of the longitudinal and transverse relaxation times with respect to the longitudinal wave vector are derived and numeric calculations are carried out. The dependence of the components of the relaxation-time tensor on the SL period and the temperature in the region around T=77 K is analyzed.

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Authors and Affiliations

  1. Kuznetsov Siberian Physicotechnical Institute, pl. Revolyutsii 1, Tomsk, 634050, Russia

    S. I. Borisenko

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  1. S. I. Borisenko
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 37, No. 5, 2003, pp. 588–591.

Original Russian Text Copyright © 2003 by Borisenko.

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Borisenko, S.I. Dispersion of the relaxation time of quasi-two-dimensional electrons under conditions of ionized-impurity scattering in a superlattice with doped quantum wells. Semiconductors 37, 569–572 (2003). https://doi.org/10.1134/1.1575363

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  • DOI: https://doi.org/10.1134/1.1575363

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