Abstract
In the single-electron approximation, in an external magnetic field with a temperature gradient, the surface current density of charge carriers in two-dimensional doubly periodic semiconductor superlattices of n-type conductivity is calculated. The magnetic field is assumed to be constant, homogeneous, and applied perpendicular to the plane of the electron gas. As the result of simultaneous solution of the Schrödinger equation and Boltzmann kinetic equation, it is demonstrated that the dependences of the surface density of the transverse current on temperature and the modulus of the temperature gradient are highly nonlinear, and regions with negative differential conductivity are present. The dependence of the relaxation time on the electron quasi-momentum is taken into consideration phenomenologically in the model through the law of carrier dispersion in the magnetic subbands.
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This work was financially supported by the Ministry of Science and Higher Education of the Russian Federation under State assignment no. 0729-2020-0058.
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Translated by G. Levina
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Perov, A.A., Pikunov, P.V. Transverse Nernst–Ettingshausen Effect in the Two–Dimensional Electron Gas of a Doubly Periodic Semiconductor Superlattice. Semiconductors 55, 869–873 (2021). https://doi.org/10.1134/S1063782621100183
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DOI: https://doi.org/10.1134/S1063782621100183