Abstract
A study of charge relaxation processes in metal-insulator-semiconductor structures containing the rare-earth oxides Gd2O3 and Lu2O3 as the insulator has been performed using the deep-level transient spectroscopy (DLTS) method in combination with a study of nonlinear oscillations in the metal-insulator-semiconductor structure connected to an external inductive circuit. On the basis of the DLTS results and the variation with temperature of the configuration of the period multiplicity regions of the controlling parameters (the amplitude and frequency of the applied voltage) it is shown that the generation of nonlinear oscillations in a metal-insulator-semiconductor structure is governed by the properties of the insulator-semiconductor interface, in particular, the density of surface states and the capture cross sections.
Similar content being viewed by others
References
K. Yamasaki, M. Yoshida, and T. Sugano, Jpn. J. Appl. Phys. 18, 113 (1979).
D. S. Gusta, M. M. Chandra, and V. Kumar, Phys. Status Solidi A 80, K209 (1983).
T. Katsube and K. Kakimoto, J. Appl. Phys. 52, 3504 (1983).
A. A. Lebedev, Fiz. Tekh. Poluprovodn. 31, 437 (1997) [Semiconductors 31, 371 (1997)].
Author information
Authors and Affiliations
Additional information
Fiz. Tekh. Poluprovodn. 32, 1337–1342 (November 1998)
Rights and permissions
About this article
Cite this article
Fedorenko, Y.G., Sverdlova, A.M. & Malinin, A. Study of the dynamical characteristics of an insulator-semiconductor interface. Semiconductors 32, 1190–1195 (1998). https://doi.org/10.1134/1.1187590
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1134/1.1187590