Abstract
The electron and hole spectra in strained Ge1−x Six/Ge heterostructures grown on a (111) plane have been investigated. It is shown that the structure of the conduction band in these structures can be determined by investigating the polarization of their photoluminescence. The selection rules for indirect optical transitions have been found.
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Fiz. Tekh. Poluprovodn. 31, 235–242 (February 1997)
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Aleshkin, V.Y., Bekin, N.A. Electron and hole spectra and selection rules for optical transitions in Ge1−x Six/Ge heterostructures. Semiconductors 31, 132–138 (1997). https://doi.org/10.1134/1.1187094
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DOI: https://doi.org/10.1134/1.1187094