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Formation of Short Pulses with a Subnanosecond Rise Time and a Peak Power of Up to 1 GW by a Semiconductor Avalanche Sharpener

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Abstract

The results of experiments on the formation of high-power pulses with a rise time of <1 ns and a duration of 1–2 ns by a solid-state semiconductor sharpener operating in the mode of delayed impact ionization wave are presented. A peak power of 1 GW in a single-pulse operation mode and 750 MW at a pulse repetition rate of 3.5 kHz was obtained across a 50-Ω load. Experiments on the pulse transformation using a forming line with a variable wave impedance and generation of bipolar voltage pulses are described.

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Authors and Affiliations

  1. Institute of Electrophysics, Ural Division, Russian Academy of Sciences, ul. Amundsena 106, Yekaterinburg, 620016, Russia

    E. A. Alichkin, S. K. Lyubutin, A. V. Ponomarev, S. N. Rukin & B. G. Slovikovskii

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  1. E. A. Alichkin
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  2. S. K. Lyubutin
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  3. A. V. Ponomarev
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  4. S. N. Rukin
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  5. B. G. Slovikovskii
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Alichkin, E.A., Lyubutin, S.K., Ponomarev, A.V. et al. Formation of Short Pulses with a Subnanosecond Rise Time and a Peak Power of Up to 1 GW by a Semiconductor Avalanche Sharpener. Instruments and Experimental Techniques 45, 535–539 (2002). https://doi.org/10.1023/A:1019798805905

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  • DOI: https://doi.org/10.1023/A:1019798805905

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