Abstract
Crystalline In2Se3 films were fabricated by magnetron sputtering from a sintered In2Se3-compound target and the effects of the deposition parameters, including the working pressure and deposition time, on the phase composition, structure, morphology, and optical properties were clarified. Single-phase κ-In2Se3 was prepared at 4.0 Pa, but γ-In2Se3 was recognized when the working pressure was lower than 4.0 Pa. The optical transmittance of the films decreased to 45% and the optical band gap varied from 2.9 to 2.0 eV with increasing film thickness from 80 to 967 nm. Metal-semiconductor-metal (MSM) photodetectors based on γ-In2Se3 thin films with various thicknesses were also fabricated. The result of photosensitivity research on such MSM photodetectors suggests that it may be impossible to fabricate wide-absorption-range MSM devices by just using a single material (γ-In2Se3) because of spatial potential fluctuations in the layers.
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Yan, Y., Li, S., Ou, Y. et al. Effects of pressure and deposition time on the characteristics of In2Se3 films grown by magnetron sputtering. Electron. Mater. Lett. 10, 1093–1101 (2014). https://doi.org/10.1007/s13391-014-4081-y
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DOI: https://doi.org/10.1007/s13391-014-4081-y