Abstract
In this study, we investigated the effect of RF sputtering power on the structural, morphological, optical, and photodetector properties of γ-In2Se3 thin films. The In2Se3 films were deposited at 80 W, 100 W, 120 W, and 150 W and characterized using XRD, Raman spectroscopy, FE-SEM, and EDS. The XRD results showed that the rise in RF sputtering power enhanced the crystallinity of the prepared films. The formation of the γ phase of In2Se3 was confirmed by Raman spectroscopy. FE-SEM images showed that the In2Se3 films were compact, smooth, and had uniform grain growth. The increase in film thickness with RF power was observed in cross-sectional FE-SEM. The EDS analysis confirmed that as-prepared γ-In2Se3 films have stoichiometric chemical composition. The optical bandgap of the films decreased from 2.07 to 1.85 eV with an increase in RF power, which can be attributed to an increase in crystallite size due to an increase in RF power. The optoelectronic performance of the films was evaluated by fabricating γ-In2Se3 photodetectors. The photodetector fabricated at 100 W sputtering power had excellent performance. It had a detectivity of 2.5 × 108 Jones, photoresponsivity of 17 µA/W, fast rise time of 0.27 s, and decay times of 0.31 s.
Similar content being viewed by others
Data availability
Data will be made available on request.
References
Y. Fang, H. Zhang, F. Azad, S. Wang, F. Ling, S. Su, Band offset and an ultra-fast response UV-VIS photodetector in γ-In2Se3/p-Si heterojunction heterostructures. RSC Adv. 8, 29555–29561 (2018). https://doi.org/10.1039/C8RA05677C
C. Ho, M. Lin, C. Pan, Optical-memory switching and oxygen detection based on the CVT grown γ- and α-phase In2Se3. Sens. Actuators B 209, 811–819 (2015). https://doi.org/10.1016/j.snb.2014.12.036
R. Niranjan, N. Padha, Growth of γ-In2Se3 monolayer from multifaceted InxSey thin films via annealing and study of its physical properties. Mater. Chem. Phys. 257, 123823 (2021). https://doi.org/10.1016/j.matchemphys.2020.123823
Chanchal, K. Jindal, A. Pandey, M. Tomar, P. Jha, Phase-defined growth of In2Se3 thin films using PLD technique for high-performance self-powered UV photodetector. Appl. Surf. Sci. 595, 153505 (2022). https://doi.org/10.1016/j.apsusc.2022.153505
D. Sarkar, N. Das, M. Saikh, S. Roy, S. Paul, N. Hoque, R. Basu, S. Das, Elevating the performance of nanoporous bismuth selenide incorporated arch-shaped triboelectric nanogenerator by implementing piezo-tribo coupling effect: harvesting biomechanical energy and low scale energy sensing applications. Adv. Compos. Hybrid Mater. 6, 232 (2023). https://doi.org/10.1007/s42114-023-00807-0
Z. Luo, L. Tong, Z. Lin, R. Amin, J. Ren, K. Khatib, C. Wang, Ferrum-doped nickel selenide @tri-nickel diselenide heterostructure electrocatalysts with efficient and stable water splitting for hydrogen and oxygen production. Adv. Compos. Hybrid Mater. 6, 159 (2023). https://doi.org/10.1007/s42114-023-00737-x
S. Gupta, P. Sanap, G. Dilwale, R. Bulakhe, A. Jagadale, M. Deore, A. Bhalerao, C. Lokhande, Nanostructured zinc selenide (ZnSe) thin films deposited by various modes of electrodeposition for photovoltaic application. ES Energy Environ. (2023). https://doi.org/10.30919/esee910
P. Hankare, M. Asabe, P. Chate, K. Rathod, Structural, optical and microscopic properties of chemically deposited In2Se3 thin films. J. Mater. Sci. Mater. Electron. 19, 1252–1257 (2008). https://doi.org/10.1007/s10854-008-9585-5
O. Dilmi, M. Benaicha, Electrochemical synthesis of In2Se3 thin films from citrate bath. Structural, optical and morphological investigations. Russ. J. Electrochem. 57, 462–470 (2021). https://doi.org/10.1134/S1023193521050049
Y. Jiang, Q. Wang, L. Han, X. Zhang, L. Jiang, Z. Wu, Y. Lai, D. Wang, F. Liu, Construction of In2Se3/MoS2 heterojunction as photoanode toward efficient photoelectrochemical water splitting. Chem. Eng. J. 358, 752–758 (2019). https://doi.org/10.1016/j.cej.2018.10.088
Y. Hase, Y. Jadhav, R. Aher, V. Sharma, S. Shah, A. Punde, A. Waghmare, V. Doiphode, P. Shinde, S. Rahane, P. Vairale, B. Bade, M. Prasad, S. Rondiya, A. Rokade, S. Jadkar, Annealing temperature effect on structural and optoelectronic properties of γ-In2Se3 thin films towards highly stable photodetector applications. J. Mol. Struct. 1265, 133336 (2022). https://doi.org/10.1016/j.molstruc.2022.133336
I. Mutlu, M. Zarbaliyev, F. Aslan, Indium selenide thin film preparation by sol-gel technique. J. Sol-Gel Sci. Technol. 43, 223–226 (2007). https://doi.org/10.1007/s10971-007-1573-3
A. Yadav, S. Salunke, Photoelectrochemical properties of In2Se3 thin films: effect of substrate temperature. J. Alloys Compd. 640, 534–539 (2015). https://doi.org/10.1016/j.jallcom.2015.04.041
R. Panda, R. Naik, N. Mishra, Low-temperature growth of γ phase in thermally deposited In2Se3 thin films. Phase Transitions 91, 862–871 (2018). https://doi.org/10.1080/01411594.2018.1508680
T. Okamoto, A. Yamada, M. Konagai, Growth and characterization of In2Se3 epitaxial films by molecular beam epitaxy. J. Cryst. Growth 175–176, 1045–1050 (1997). https://doi.org/10.1016/S0022-0248(96)00984-0
B. Thomas, T. Kutty, Formation of single-phase indium selenide thin films by elemental evaporation. Phys. Status Solidi 119, 127–138 (1990). https://doi.org/10.1002/pssa.2211190115
R. Kulkarni, S. Rondiya, A. Pawbake, R. Waykar, A. Jadhavar, V. Jadkar, A. Bhorde, A. Date, H. Pathan, S. Jadkar, Structural and optical properties of CdTe thin films deposited using RF magnetron sputtering. Energy Procedia. 110, 188–195 (2017). https://doi.org/10.1016/j.egypro.2017.03.126
A. Mantarci, M. Kundakçi, Power-dependent physical properties of GaN thin films deposited on sapphire substrates by RF magnetron sputtering. Bull. Mater. Sci. 42, 196 (2019). https://doi.org/10.1007/s12034-019-1883-4
S. Yang, Y. Li, X. Wang, N. Huo, J. Xia, S. Li, J. Li, High performance few-layer GaS photodetector and its unique photo-response in different gas environments. Nanoscale 6, 2582–2587 (2014). https://doi.org/10.1039/C3NR05965K
M. Long, P. Wang, H. Fang, W. Hu, Progress, challenges, and opportunities for 2D material based photodetectors. Adv. Funct. Mater. 29, 1803807 (2019). https://doi.org/10.1002/adfm.201803807
L. Singh, R. Singh, B. Zhang, S. Cheng, B. Kumar Kaushik, S. Kumar, LSPR based uric acid sensor using graphene oxide and gold nanoparticles functionalized tapered fiber. Opt. Fiber Technol. 53, 102043 (2019). https://doi.org/10.1016/j.yofte.2019.102043
G. Konstantatos, E. Sargent, Nanostructured materials for photon detection. Nat. Nanotechnol. 5, 391–400 (2010). https://doi.org/10.1038/nnano.2010.78
K. Khan, A. Tareen, Q. Khan, M. Iqbal, H. Zhang, Z. Guo, Novel synthesis, properties and applications of emerging group VA two-dimensional monoelemental materials (2D-Xenes). Mater. Chem. Front. 5, 6333–6391 (2021). https://doi.org/10.1039/D1QM00629K
F. Wang, X. Zou, M. Xu, H. Wang, H. Wang, H. Guo, J. Guo, P. Wang, M. Peng, Z. Wang, Y. Wang, J. Miao, F. Chen, J. Wang, X. Chen, A. Pan, C. Shan, L. Liao, W. Hu, Recent progress on electrical and optical manipulations of perovskite photodetectors. Adv. Sci. 8, 2100569 (2021). https://doi.org/10.1002/advs.202100569
B. Wang, S. Zhong, P. Xu, H. Zhang, Recent development and advances in photodetectors based on two-dimensional topological insulators. J. Mater. Chem. C. 8, 15526–15574 (2020). https://doi.org/10.1039/D0TC03410J
F. Wang, Y. Zhang, Y. Gao, P. Luo, J. Su, W. Han, K. Liu, H. Li, T. Zhai, 2D metal chalcogenides for IR photodetection. Small 15, 1901347 (2019). https://doi.org/10.1002/smll.201901347
H. Algadi, J. Ren, A. Alqarni, A high-performance self-powered photodetector based on solution-processed nitrogen-doped graphene quantum dots/all-inorganic perovskite heterostructures. Adv. Compos. Hybrid Mater. 6, 98 (2023). https://doi.org/10.1007/s42114-023-00688-3
H. Algadi, T. Das, J. Ren, H. Li, High-performance and stable hybrid photodetector based on a monolayer molybdenum disulfide (MoS2)/nitrogen-doped graphene quantum dots (NH2GQDs)/all-inorganic (CsPbBr3) perovskite nanocrystals triple junction. Adv. Compos. Hybrid Mater. 6, 56 (2023). https://doi.org/10.1007/s42114-023-00634-3
H. Algadi, J. Ren, A. Alqarni, Solution-processed nitrogen-doped graphene quantum dots/perovskite composite heterojunction for boosting performance of anatase titanium dioxide (TiO2)-based UV photodetector. Adv. Compos. Hybrid Mater. 6, 86 (2023). https://doi.org/10.1007/s42114-023-00667-8
S. Pawar, P. Lokhande, J. Kaur, R. Dubey, H. Pathan, Monochromatic photochemical deposition and characterization of ZnSe thin films. ES Energy Environ. (2022). https://doi.org/10.30919/esee8c685
K. Benyahia, F. Djeffal, H. Ferhati, A. Bendjerad, A. Benhaya, A. Saidi, Self-powered photodetector with improved and broadband multispectral photoresponsivity based on ZnO-ZnS composite. J. Alloys Compd. 859, 158242 (2021). https://doi.org/10.1016/j.jallcom.2020.158242
H. Ferhati, F. Djeffal, High-responsivity MSM solar-blind UV photodetector based on annealed ITO/Ag/ITO structure using RF sputtering. IEEE Sens. J. 19, 7942–7949 (2019). https://doi.org/10.1109/JSEN.2019.2920815
M. Ito, O. Wada, Low dark current GaAs metal-semiconductor-metal (MSM) photodiodes using WSix contacts. IEEE J. Quantum Electron. 22, 1073–1077 (1986). https://doi.org/10.1109/JQE.1986.1073081
J. Soole, H. Schumacher, InGaAs metal-semiconductor-metal photodetectors for long wavelength optical communications. IEEE J. Quantum Electron. 27, 737–752 (1991). https://doi.org/10.1109/3.81384
D. Wuu, S. Hsu, R. Horng, Improvements of transparent electrode materials for GaN metal–semiconductor–metal photodetectors. J. Mater. Sci. Mater. Electron. 15, 793–796 (2004). https://doi.org/10.1023/B:JMSE.0000045301.37195.d7
J. Seo, A. Ketterson, D. Ballegeer, K. Cheng, I. Adesida, X. Li, T. Gessert, A comparative study of metal-semiconductor-metal photodetectors on GaAs with indium-tin-oxide and Ti/Au electrodes. IEEE Photonics Technol. Lett. 4, 888–890 (1992). https://doi.org/10.1109/68.149898
G. Yadav, V. Gupta, M. Tomar, Double Schottky metal–semiconductor–metal based GaN photodetectors with improved response using laser MBE technique. J. Mater. Res. 37, 457–469 (2022). https://doi.org/10.1557/s43578-021-00467-0
W. Wohlmuth, I. Adesida, C. Caneau, Long-wavelength metal-semiconductor-metal photodetectors with transparent and opaque electrodes, in Photodetectors and Power Meters II, ed. by K. Muray, K.J. Kaufmann (1995), pp. 256–265. https://doi.org/10.1117/12.221406.
J. Kim, H. Griem, R. Friedman, E. Chan, S. Ray, High-performance back-illuminated InGaAs/InAlAs MSM photodetector with a record responsivity of 0.96 A/W. IEEE Photonics Technol. Lett. 4, 1241–1244 (1992). https://doi.org/10.1109/68.166955
H. Liu, Q. Wang, W. Sheng, X. Wang, K. Zhang, L. Du, J. Zhou, Humidity sensors with shielding electrode under interdigitated electrode. Sensors. 19, 659 (2019). https://doi.org/10.3390/s19030659
P. Teerapanich, M. Myint, C. Joseph, G. Hornyak, J. Dutta, Development and improvement of carbon nanotube-based ammonia gas sensors using ink-jet printed interdigitated electrodes. IEEE Trans. Nanotechnol. 12, 255–262 (2013). https://doi.org/10.1109/TNANO.2013.2242203
J. Jeong, J. Huh, J. Lee, H. Chu, J. Pak, B. Ju, Interdigitated electrode geometry effects on the performance of organic photoconductors for optical sensor applications. Thin Solid Films 518, 6343–6347 (2010). https://doi.org/10.1016/j.tsf.2010.01.056
W. Laureyn, D. Nelis, P. Gerwen, K. Baert, L. Hermans, R. Magnée, J. Pireaux, G. Maes, Nanoscaled interdigitated titanium electrodes for impedimetric biosensing. Sens. Actuators B 68, 360–370 (2000). https://doi.org/10.1016/S0925-4005(00)00489-5
S. MacKay, P. Hermansen, D. Wishart, J. Chen, Simulations of interdigitated electrode interactions with gold nanoparticles for impedance-based biosensing applications. Sensors. 15, 22192–22208 (2015). https://doi.org/10.3390/s150922192
Y. Hase, V. Sharma, M. Prasad, R. Aher, S. Shah, V. Doiphode, A. Waghmare, A. Punde, P. Shinde, S. Rahane, B. Bade, S. Ladhane, H. Pathan, S. Patole, S. Jadkar, Fabrication of γ-In2Se3-based photodetector using RF magnetron sputtering and investigations of its temperature-dependent properties. IEEE Sens. J. 23, 5681–5694 (2023). https://doi.org/10.1109/JSEN.2023.3239808
N. Balakrishnan, E. Steer, E. Smith, Z. Kudrynskyi, Z. Kovalyuk, L. Eaves, A. Patanè, P. Beton, Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe. 2D Mater. 5, 035026 (2018). https://doi.org/10.1088/2053-1583/aac479
F. Faradev, N. Gasanly, B. Mavrin, N. Melnik, Raman scattering in some III-VI layer single crystals. Phys. Status Solidi 85, 381–386 (1978). https://doi.org/10.1002/pssb.2220850142
Y. Zhang, M. Wang, K. Cao, C. Wu, C. Xie, Y. Zhou, L. Luo, Fabrication of a γ-In2Se3/Si heterostructure phototransistor for heart rate detection. J. Mater. Chem. C 9, 7888–7892 (2021). https://doi.org/10.1039/D1TC01837J
Z. Chen, W. Tian, X. Zhang, Y. Wang, Effect of deposition parameters on surface roughness and consequent electromagnetic performance of capacitive RF MEMS switches: a review. J. Micromech. Microeng. 27, 113003 (2017). https://doi.org/10.1088/1361-6439/aa8917
R. Waykar, A. Pawbake, R. Kulkarni, A. Jadhavar, A. Funde, V. Waman, H. Pathan, S. Jadkar, Influence of RF power on structural, morphology, electrical, composition and optical properties of Al-doped ZnO films deposited by RF magnetron sputtering. J. Mater. Sci. Mater. Electron. 27, 1134–1143 (2016). https://doi.org/10.1007/s10854-015-3862-x
A. Lawal, A. Shaari, R. Ahmed, L. Taura, Investigation of excitonic states effects on optoelectronic properties of Sb2Se3 crystal for broadband photo-detector by highly accurate first-principles approach. Curr. Appl. Phys. 18, 567–575 (2018). https://doi.org/10.1016/j.cap.2018.02.008
P. Kamat, N. Dimitrijevic, A. Nozik, Dynamic Burstein-Moss shift in semiconductor colloids. J. Phys. Chem. 93, 2873–2875 (1989). https://doi.org/10.1021/j100345a003
D. Kim, D. Hwang, C. Son, Y. Son, Effect of sputtering power on the structure and optical properties of radio frequency sputtered-ZnS thin film. J. Nanosci. Nanotechnol. 17, 5046–5049 (2017). https://doi.org/10.1166/jnn.2017.14277
A. Abdulrahman, A. Barzinjy, S. Hamad, M. Almessiere, Impact of radio frequency plasma power on the structure, crystallinity, dislocation density, and the energy band gap of ZnO nanostructure. ACS Omega 6, 31605–31614 (2021). https://doi.org/10.1021/acsomega.1c04105
J. Shi, C. Dong, W. Dai, J. Wu, Y. Chen, R. Zhan, The influence of RF power on the electrical properties of sputtered amorphous In-Ga-Zn-O thin films and devices. J. Semicond. 34, 084003 (2013). https://doi.org/10.1088/1674-4926/34/8/084003
A. Bhorde, S. Nair, H. Borate, S. Pandharkar, R. Aher, A. Punde, A. Waghmare, P. Shinde, P. Vairale, R. Waykar, V. Doiphode, V. Jadkar, Y. Hase, S. Rondiya, N. Patil, M. Prasad, S. Jadkar, Highly stable and Pb-free bismuth-based perovskites for photodetector applications. New J. Chem. 44, 11282–11290 (2020). https://doi.org/10.1039/D0NJ01806F
R. Aher, A. Bhorde, S. Nair, H. Borate, S. Pandharkar, D. Naik, P. Vairale, S. Karpe, D. Late, M. Prasad, S. Jadkar, Solvothermal growth of PbBi2Se4 nano-flowers: a material for humidity sensor and photodetector applications. Phys. Status Solidi 216, 1900065 (2019). https://doi.org/10.1002/pssa.201900065
J. Yao, Z. Zheng, J. Shao, G. Yang, Stable, highly-responsive and broadband photodetection based on large-area multilayered WS2 films grown by pulsed-laser deposition. Nanoscale 7, 14974–14981 (2015). https://doi.org/10.1039/C5NR03361F
C. Chen, H. Qiao, S. Lin, C. Man Luk, Y. Liu, Z. Xu, J. Song, Y. Xue, D. Li, J. Yuan, W. Yu, C. Pan, S. Ping Lau, Q. Bao, Highly responsive MoS2 photodetectors enhanced by graphene quantum dots. Sci. Rep. 5, 11830 (2015). https://doi.org/10.1038/srep11830
A. Pawbake, R. Waykar, D. Late, S. Jadkar, Highly transparent wafer-scale synthesis of crystalline WS2 nanoparticle thin film for photodetector and humidity-sensing applications. ACS Appl. Mater. Interfaces 8, 3359–3365 (2016). https://doi.org/10.1021/acsami.5b11325
R. Mech, S. Solanke, N. Mohta, M. Rangarajan, D. Nath, In2Se3 Visible/Near-IR photodetector with observation of band-edge in spectral response. IEEE Photonics Technol. Lett. 31, 905–908 (2019). https://doi.org/10.1109/LPT.2019.2912912
P. Hou, C. Wang, Y. Chen, Q. Zhong, Y. Zhang, H. Guo, X. Zhong, J. Wang, X. Ouyang, Ionization effect and displacement effect induced photoresponsivity degradation on α-In2Se3 based transistors for photodetectors. Radiat. Phys. Chem. 174, 108969 (2020). https://doi.org/10.1016/j.radphyschem.2020.108969
M. Anandan, H. Hsieh, F. Liu, C. Chen, K. Lee, L. Chao, C. Ho, R. Chen, High-responsivity broadband sensing and photoconduction mechanism in direct-Gap α-In2Se3 nanosheet photodetectors. Nanotechnology 31, 465201 (2020). https://doi.org/10.1088/1361-6528/abac7e
Acknowledgements
Yogesh Hase, Ashish Waghmare, Shruti Shah, Pratibha Shinde, Vidya Doiphode, Somnath Ladhane, and Bharat Bade are grateful to the Ministry of New and Renewable Energy (MNRE), Government of India, New Delhi, for the National Renewable Energy (NRE) fellowship and financial assistance. Swati Rahane is thankful for the research fellowship to the Chhatrapati Shahu Maharaj Research, Training and Human Development Institute (SARTHI), Government of Maharashtra. Dhanashri Kale is grateful to the Department of Science and Technology, Government of India, New Delhi, for the financial support under the Innovation in Science Pursuit for Inspired Research (INSPIRE) fellowship. Finally, Sandesh Jadkar and Mohit Prasad thank the University Grants Commission (UPE program), New Delhi, and the Indo-French Centre for the Promotion of Advanced Research-CEFIPRA, Department of Science and Technology, New Delhi, for special financial support.
Author information
Authors and Affiliations
Contributions
Yogesh Hase: Methodology, Conceptualization, Validation, Formal analysis, Investigation; Mohit Prasad: Formal analysis, Investigation, Data curation, Writing-Review, and Editing; Shruti Shah: Methodology, Validation, Formal analysis, Investigation; Vidya Doiphode: Data curation, Formal analysis, Investigation;
Ashish Waghmare: Methodology, Formal analysis, Investigation, Data curation; Ashvini Punde: Methodology, Conceptualization, Validation, Investigation; Pratibha Shinde: Conceptualization, Validation, Formal analysis, Investigation; Swati Rahane: Data curation, Formal analysis, Investigation; Bharat Bade: Methodology, Validation, Formal analysis, Investigation; Somnath Ladhane: Data curation, Formal analysis, Investigation; Dhanashri Kale: Methodology, Formal analysis, Investigation; Sachin Rondiya: Methodology, Conceptualization, Validation, Investigation; Sandesh Jadkar: Visualization, Writing-Review, Editing, Supervision, Funding acquisition.
Corresponding author
Ethics declarations
Competing interests
The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.
Additional information
Publisher's Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
About this article
Cite this article
Hase, Y., Prasad, M., Shah, S. et al. Enhanced performance of γ-In2Se3 photodetector on ITO-coated interdigital electrodes fabricated via RF-magnetron sputtering. J Mater Sci: Mater Electron 35, 859 (2024). https://doi.org/10.1007/s10854-024-12590-9
Received:
Accepted:
Published:
DOI: https://doi.org/10.1007/s10854-024-12590-9