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Optical Amplification in Dilute Nitride Hot Electron Light Emission–VCSOAs Devices

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Abstract

We have demonstrated an optical amplification of hot electron light emitting and lasing in semiconductor heterostructure (HELLISH) vertical-cavity semiconductor optical amplifiers (VCSOAs) at wavelength operation of \({\lambda=1.29\,{\rm \mu}{\rm m}}\). These devices were characterized using optical pumping, electrical pumping and optical–electrical pumping. HELLISH–VCSOA device of 500-μm contact separation is a surface emitter based on longitudinal injection of electron and hole pairs in their respective channels. Dilute nitride Ga0.35In0.65N0.02As0.08/GaAs is used as an active material for operation in the \({\lambda=1.3-{\rm \mu}{\rm m}}\) window of the optical communications. The device has undoped distributed Bragg reflectors (DBRs), and the current is injected longitudinally into the active layers without passing through DBRs. The issues are associated with refractive index contrast, and current injections through the DBR layers are avoided.

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Abbreviations

PL:

Photoluminescence

EL:

Electroluminescence

EPL:

Electro-photoluminescence

HELLISH:

Hot electron light emitting and lasing in semiconductor heterostructure

VCSOAs:

Vertical-cavity semiconductor optical amplifiers

DBRs:

Distributed Bragg reflectors

CW:

Continue wavelength

T :

Temperature

P :

Power

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Authors and Affiliations

  1. Department of Physics, Faculty of Science and Health, University of Koya, Kurdistan Region, KOY45, Iraq

    Faten Adel Ismael Chaqmaqchee

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  1. Faten Adel Ismael Chaqmaqchee
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Correspondence to Faten Adel Ismael Chaqmaqchee.

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Chaqmaqchee, F.A.I. Optical Amplification in Dilute Nitride Hot Electron Light Emission–VCSOAs Devices. Arab J Sci Eng 40, 2111–2115 (2015). https://doi.org/10.1007/s13369-015-1686-x

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