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Optical and electrical properties of modulation-doped n and p-type Ga x In1-x N y As1-y /GaAs quantum wells for 1.3 μm laser applications

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Abstract

We present a comprehensive study of spectral photoluminescence (PL), photoconductivity and Hall mobility in undoped, n and p-type modulation-doped quantum wells of Ga1-x In x N y As1-y /GaAs with varying nitrogen concentration. We show that the increasing nitrogen composition red shifts the energy gap and this red shift is accompanied with a reduction of the 2D electron mobility in the quantum wells. True temperature dependence of the band gap, free from errors associated with nitrogen induced exciton trapping effects, is observed because in the modulation doped QW samples PL emission is dominated by band-to-band recombination and the S-shape temperature dependence is eliminated. Excellent fit to semi-experimental Varshni equation is obtained and the temperature dependence of the band gap in the linear regime (dE/dT) is tabulated as a function of nitrogen concentration and the type of dopant.

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Authors and Affiliations

  1. Department of Computing Electronic Systems, University of Essex, Wivenhoe Park, Colchester, CO4 3SQ, UK

    Y. Sun & N. Balkan

  2. Department of Physics, Istanbul University, Science Faculty, 34134, Istanbul, Turkey

    A. Erol & M. C. Arikan

  3. Department of Physics, Akdeniz University, Faculty of Arts & Science, Antalya, Turkey

    M. Yilmaz, B. Ulug & A. Ulug

  4. Helsinki University Technology, Micronova, POB 3500, Helsinki, 02015, Finland

    M. Sopanen, O. Reentilä & M. Mattila

  5. Laboratory for Analysis and Architecture of System, 7 avenue du Colonel Roche, 31077, Toulouse Cedex 4, France

    C. Fontaine & A. Arnoult

Authors
  1. Y. Sun
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  2. A. Erol
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  3. M. Yilmaz
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  4. M. C. Arikan
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  5. B. Ulug
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  6. A. Ulug
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  7. N. Balkan
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  8. M. Sopanen
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  9. O. Reentilä
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  10. M. Mattila
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  11. C. Fontaine
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  12. A. Arnoult
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Correspondence to N. Balkan.

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Sun, Y., Erol, A., Yilmaz, M. et al. Optical and electrical properties of modulation-doped n and p-type Ga x In1-x N y As1-y /GaAs quantum wells for 1.3 μm laser applications. Opt Quant Electron 40, 467–474 (2008). https://doi.org/10.1007/s11082-007-9163-8

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  • DOI: https://doi.org/10.1007/s11082-007-9163-8

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