Abstract
The goal of net zero emission accelerates scale application of solar photovoltaic. To achieve grid parity technology iterations in monocrystalline silicon growth by the Czochralski method have made great efforts. The aim of this study is to explore heat transfer and thermal stress induced by water-cooling jacket for 12-inch diameter Cz-Si grown from 40-inch diameter crucible. The numerical simulation results show the point of maximum thermal stress shifts from crystal side surface to center of solid–liquid interface along with increase in the distance between water-cooling jacket and crystal. In spite of decrease in overall heat transfer from the crystal occurring with increased jacket distance, convection heat transfer dominates around the triple point and radiative heat transfer prevails at the greater heights. Deflection of the solid–liquid interface increases with the jacket distance. The distance of 20–30 mm is suggested for minimum thermal stress and uniform distribution.
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Funding
This work was supported by Key Research and Development Program of Yunnan Province of China (Grant numbers: 202103AA080006, 202102AB080016, and 202202AG050012), Yunnan Province Basic Research General Program (Grant number: 202101AT070092), and Kunming University of Science and Technology Double First-Class Initiative Collaborative Projects (Grant numbers: 202101BE070001-010).
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Luxi Li conducted simulations and wrote the draft of manuscript.
Xiaohan Wan analyzed the simulation results and revised the manuscript.
Wenhui Ma, Shaoyuan Li and Shicong Yang reviewed the manuscript.
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Li, L., Wan, X., Ma, W. et al. Effect of Water-Cooling Jacket on Thermal Stress of Large-Diameter Silicon Grown by Czochralski Method. Silicon (2024). https://doi.org/10.1007/s12633-024-03004-w
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DOI: https://doi.org/10.1007/s12633-024-03004-w