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Recent progress in homoepitaxial single-crystal diamond growth via MPCVD

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Abstract

Microwave plasma chemical vapor deposition (MPCVD) is regarded as one of the most promising techniques for the preparation of large-scale and high-quality epitaxial single-crystal diamonds. This review paper provides an overview of recent advancements in MPCVD single-crystal diamond growth, including discussions on the growth mechanism, substrate holder design, and seed crystal screening and pretreatment for achieving homogeneous epitaxial single-crystal diamond. Key growth parameters such as temperature, methane concentration, power density, etc., are investigated to guide the attainment of optimal growth conditions. Furthermore, critical growth techniques like three-dimensional growth, repeated growth, and mosaic splicing are analyzed to enhance the area coverage of single-crystal diamonds. The work on achieving low defect and high purity growth is also elucidated. Additionally, this paper discusses the progress made in n-type and p-type doping of diamond materials. Finally, a summary is provided highlighting the challenges encountered during MPCVD single-crystal diamonds growth.

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Acknowledgements

This work was financially supported by Science and Technology Major Project of Henan Province (No. 231100230300), Science and Technology Major Project of Henan Province (No. 221100230300) and the Innovative Funds Plan of Henan University of Technology (No. 2021ZKCJ06).

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Authors and Affiliations

  1. Engineering and Technology Research Center of Diamond Composite Materials of Henan, School of Materials Science and Engineering, Henan University of Technology, Zhengzhou, 450001, China

    Ying Ren, Xiaogang Li, Wei Lv, Qiaohuan Cheng, Feng Yue & Zhengxin Li

  2. Changan Automobile Global Research and Development Center, ChongQing Changan Automobile Co., Ltd, Chongqing, 400054, China

    Haoyong Dong

  3. Faculty of Physics and CENIDE, University Duisburg Essen, Carl-Benz-Straße 199, 47057, Duisburg, Germany

    Nicolas Wöhrl

  4. Instituto de Telecomunicações e Departamento de Electrónica, Telecomunicações e Informática, University of Aveiro, 3810-193, Aveiro, Portugal

    Joana Catarina Mendes

  5. Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China

    Xun Yang

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  1. Ying Ren
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Project administration, Zhengxin Li and Xun Yang.; writing—original draft, Ying Ren; writing—review and editing, Xiaogang Li, Wei Lv and Haoyong Dong; synergistic effect, Feng Yue.; review and editing, Nicolas Wöhrl and Joana Catarina Mendes. All authors have read and agreed to the published version of the manuscript.

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Ren, Y., Li, X., Lv, W. et al. Recent progress in homoepitaxial single-crystal diamond growth via MPCVD. J Mater Sci: Mater Electron 35, 525 (2024). https://doi.org/10.1007/s10854-024-12267-3

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  • DOI: https://doi.org/10.1007/s10854-024-12267-3

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