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Influence of Radiation Heat Transfer on Mc-Si Ingot during Directional Solidification: A Numerical Investigation

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Abstract

A new design of directional solidification furnace is proposed to grow multi crystalline silicon. In the modified furnace, three holes with the same size were inserted on the graphite retort. The radiation heat transfer through the modified retort is considered. A 2-D axis symmetry model is applied in simulation. The temperature distribution, melt crystal interface, thermal stress, impurities (carbon and oxygen) and dislocation density were compared between conventional and modified models. The result shows that higher crystal quality can be obtained by the retort modification.

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References

  1. Keerthivasan T, Aravindan G, Srinivasan M, Ramaswamy P (2022) Effect of Partial Replacement of Retort with an Insulation Material on Mc-Silicon Grown in Directional Solidification Furnace: Numerical Modeling. Silicon:1–8

  2. He L, Lei Q, Rao S, Mao W, Luo H, Xu Y, Zhou C, Li J, Ding J, Cheng X (2021) Numerical and experimental investigation of octagonal thermal field for improving multi-crystalline silicon ingot quality. Vacuum 185:110007

    Article  CAS  Google Scholar 

  3. Anbu G, Nagarajan SG, Aravindan G, Srinivasan M, Ramasamy P (2020) Influence of Additional Insulation Block on Melt-Crystal Interface Shape in Directional Solidification System for Growing High Quality mc-Silicon Ingot: a Simulation Investigation. Silicon 13:1–10

    Google Scholar 

  4. Kumar MA, Aravindan G, Srinivasan M, Ramasamy P, Kakimoto K (2021) Numerical Analysis of Melt Flow and Interface Deflection during the Growth of Directional Solidified Multi-Crystalline Silicon Ingots of Three Different Dimension. Silicon 14:1–9

    CAS  Google Scholar 

  5. Su W, Yang W, Li J, Han X, Wang J (2021) Numerical study of the upgraded hot zone in silicon directional solidification process. Cryst Res Technol 56(2):2000180

    Article  CAS  Google Scholar 

  6. Su W, Li J, Yang W, Han X, Guan Z, Zhang Z (2021) Numerical Investigation of Bottom Grille for Improving Large-Size Silicon Quality in Directional Solidification Process. Silicon 14:1–11

    CAS  Google Scholar 

  7. Sundaramahalingam S, Gurusamy A, Perumalsamy R (2021) Transient Simulation on the Growth of Mono-like Silicon Ingot in DS Process Using Crucible with Plano-Concave Bottom for PV Applications. Silicon 14:1–11

    Google Scholar 

  8. Srinivasan M, Ramasamy P (2017) Numerical study on various types of stress and dislocation generation in multi-crystalline silicon at various growth stages for PV applications. Eng Comput 33(2):207–218

    Article  Google Scholar 

  9. Li X, Yang YC, Hsu CM, Tseng HW, Zhang J, Yang CF (2021) Simulation of effect of Ar flow rate on silicon ingot growth in directional solidification system. Sensors and Materials 33(8):2607–2618

    Article  CAS  Google Scholar 

  10. Wang S, Fang HS, Zhao CJ, Zhang Z, Zhang MJ, Xu JF (2015) Gas flow optimization during the cooling of multicrystalline silicon ingot. Int J Heat Mass Transf 84:370–375

    Article  CAS  Google Scholar 

  11. Yang X, Ma W, Lv G, Wei K, Luo T, Chen D (2014) A modified vacuum directional solidification system of multicrystalline silicon based on optimizing for heat transfer. J Cryst Growth 400:7–14

    Article  CAS  Google Scholar 

  12. Gurusamy A, Manikam S, Perumalsamy R (2021) Numerical investigation of cone shape grooved DS block to improve the mc–Si ingot quality. Cryst Res Technol 56(11):2100018

    Article  CAS  Google Scholar 

  13. Möller HJ, Funke C, Rinio M, Scholz S (2005) Multicrystalline silicon for solar cells. Thin Solid Films 487(1–2):179–187

    Article  Google Scholar 

  14. Möller H et al (1999) Oxygen and carbon precipitation in multicrystalline solar silicon. Physica Status Solidi (a) 171(1):175–189

    Article  Google Scholar 

  15. Nakano S, Gao B, Kakimoto K (2013) Relationship between oxygen impurity distribution in multicrystalline solar cell silicon and the use of top and side heaters during manufacture. J Cryst Growth 375:62–66

    Article  CAS  Google Scholar 

  16. Lan C et al (2016) Engineering silicon crystals for photovoltaics. CrystEngComm 18(9):1474–1485

    Article  CAS  Google Scholar 

  17. Kerkar F, Kheloufi A, Dokhan N, Ouadjaout D, Belhousse S, Medjahed S, Meribai N, Laib K (2020) Oxygen and carbon distribution in 80Kg multicrystalline silicon ingot. Silicon 12(3):473–478

    Article  CAS  Google Scholar 

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Authors and Affiliations

  1. Department of Physics, Sri Sivasubramaniya Nadar College of Engineering, Chennai, 603110, India

    T. Keerthivasan, S. Sugunraj, M. Srinivasan & P. Ramasamy

  2. Department of Mechanical Engineering, National Central University, Taoyuan, 320, Taiwan

    Chen Jyh Chen

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  1. T. Keerthivasan
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  2. Chen Jyh Chen
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  3. S. Sugunraj
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  4. M. Srinivasan
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  5. P. Ramasamy
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Correspondence to M. Srinivasan.

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Keerthivasan, T., Chen, C.J., Sugunraj, S. et al. Influence of Radiation Heat Transfer on Mc-Si Ingot during Directional Solidification: A Numerical Investigation. Silicon 14, 12085–12094 (2022). https://doi.org/10.1007/s12633-022-01912-3

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  • DOI: https://doi.org/10.1007/s12633-022-01912-3

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